Nanoscale aluminum plasmonic waveguide with monolithically integrated germanium detector

Sistani, Masiar; Bartmann, Maximilian G.; Güsken, Nicholas A.; Oulton, Rupert F.; Keshmiri, Hamid; Seifner, Michael S.; Barth, Sven; Fukata, Naoki; Luong, Minh Anh; Hertog, M. den; Lugstein, A.

doi:10.1063/1.5115342

Cited by 21 publications

(19 citation statements)

References 31 publications

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“… 29 As previously shown, for such a configuration, we experimentally determined a SPP propagation length of L SPP = 140 nm at λ = 532 nm for 40 nm thin c-Al NWs. 29 With respect to the actual device geometry, Finite Difference Time Domain (FDTD) simulations revealed that adding the omega-shaped gate atop the Al–Ge nanojunction significantly lowers the LSPP (see Figure S1 ).…”

Section: Resultsmentioning

confidence: 69%

“…Effective surface plasmon excitation is achieved by coupling normal incident TM polarized laser with a vacuum wavelength of λ = 532 nm into the c-Al NW waveguide using a Si 3 N 4 membrane FGC, located above the Al contact pad (see Figure a,b) . As previously shown, for such a configuration, we experimentally determined a SPP propagation length of L SPP = 140 nm at λ = 532 nm for 40 nm thin c-Al NWs .…”

Section: Resultsmentioning

confidence: 81%

“…Effective surface plasmon excitation is achieved by coupling normal incident TM polarized laser with a vacuum wavelength of λ = 532 nm into the c-Al NW waveguide using a Si3N4 membrane FGC, 28 located above the Al contact pad (see Figure 1a and 1b). 29 For such a configuration we experimentally determined a SPP propagation length of Lm=140 nm at λ = 532 nm for 40 nm thin c-Al NWs. 29 Figure 2a shows a cross-sectional schematic of the Al plasmonic waveguide enwrapped by the Al2O3 shell and the omega-shaped metal gate.…”

Section: Resultsmentioning

confidence: 99%

“…29 For such a configuration we experimentally determined a SPP propagation length of Lm=140 nm at λ = 532 nm for 40 nm thin c-Al NWs. 29 Figure 2a shows a cross-sectional schematic of the Al plasmonic waveguide enwrapped by the Al2O3 shell and the omega-shaped metal gate. Finite Difference Time Domain (FDTD) simulations confirm a bound mode propagation along the NW, below the gate and right until the Al-Ge interface.…”

Section: Resultsmentioning

confidence: 99%

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Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal–Semiconductor Nanojunctions

et al. 2020

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Recent advances in guiding and localizing light at the nanoscale exposed the enormous potential of ultrascaled plasmonic devices. In this context, the decay of surface plasmons to hot carriers triggers a variety of applications in boosting the efficiency of energy-harvesting, photocatalysis, and photodetection. However, a detailed understanding of plasmonic hot carrier generation and, particularly, the transfer at metal–semiconductor interfaces is still elusive. In this paper, we introduce a monolithic metal–semiconductor (Al–Ge) heterostructure device, providing a platform to examine surface plasmon decay and hot electron transfer at an atomically sharp Schottky nanojunction. The gated metal–semiconductor heterojunction device features electrostatic control of the Schottky barrier height at the Al–Ge interface, enabling hot electron filtering. The ability of momentum matching and to control the energy distribution of plasmon-driven hot electron injection is demonstrated by controlling the interband electron transfer in Ge, leading to negative differential resistance.

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Section: Resultsmentioning

confidence: 69%

Section: Resultsmentioning

confidence: 81%

“…Effective surface plasmon excitation is achieved by coupling normal incident TM polarized laser with a vacuum wavelength of λ = 532 nm into the c-Al NW waveguide using a Si3N4 membrane FGC, 28 located above the Al contact pad (see Figure 1a and 1b). 29 For such a configuration we experimentally determined a SPP propagation length of Lm=140 nm at λ = 532 nm for 40 nm thin c-Al NWs. 29 Figure 2a shows a cross-sectional schematic of the Al plasmonic waveguide enwrapped by the Al2O3 shell and the omega-shaped metal gate.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal–Semiconductor Nanojunctions

et al. 2020

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“…Novel approaches enabling efficient ways to create photo-voltages, range from 2D material plasmonic hybrid structures [1][2][3] over metal-insulator-metal waveguides [4,5] to semiconductor/metal nanowire junctions [6]. One of the most widely studied systems for hot-carrier based photodetection however, are common semiconductor(SC)/metal junctions.…”

Section: Introductionmentioning

confidence: 99%

IR hot carrier based photodetection in titanium nitride oxide thin film-Si junctions

Güsken

Lauri

et al. 2020

MRS Advances

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Hot carrier based methods constitute a valuable approach for efficient and silicon compatible sub-bandgap photodetection. Although, hot electron excitation and transfer have been studied extensively on traditional materials such as Au and Ti, reports on alternative materials such as titanium nitride (TiN) are rare. Here, we perform hot hole photodetection measurements on a p-Si/metal thin film junction using Ti, Au and TiN. This material is of interest as it constitutes a refractory alternative to Au which is an important property for plasmonic applications where high field intensities can occur. In contrast to Au, a TiN/Si junction does not suffer from metal diffusion into the Si, which eases the integration with current Si-fabrication techniques. This work shows that a backside illuminated p-Si/TiN system can be used for efficient hot hole extraction in the IR, allowing for a responsivity of 1 mA/W at an excitation wavelength of 1250 nm and at zero bias. Via a comparison between TiN and other commonly used materials such as Au, the origin of this comparably high photoresponse can be traced back to be directly linked to a thin TiO2-x interfacial layer allowing for a distinct hot-hole transfer mechanism. Moreover, the fabrication of TiN nanodisk arrays is demonstrated which bears great promise to further boost the device efficiency.

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Direct Observation of Liquid–Solid Two‐Phase Seed Particle‐Assisted Kinking in GaP Nanowire Growth

Seifner

Snellman

et al. 2023

Small Structures

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In the last decades, the metal‐assisted growth approach of semiconductor nanowires (NWs) has shown its potential in controlling crystal properties, such as crystal structure, composition, and morphology. Recently, literature reports have shown successful semiconductor NW growth with multiphase seed particles under growth conditions. Exploring alternative metal seeds and the mechanisms for growing semiconductor NWs is an exciting research field aiming to improve the control over the crystal growth process. Herein, the gallium phosphide (GaP) NW growth using Cu as seed particles inside an environmental transmission electron microscope is studied. In particular, the transformations of the Cu‐rich seed particles during the nucleation and growth of GaP NWs are observed. The supply of a relatively high amount of Ga atoms by the precursor mixture led to a solid Cu‐rich seed particle core covered by a liquid phase. Different growth dynamics within the two‐phase seed particle resulted in local competition in NW growth. As a result, the GaP NW kinked into another growth direction by forming a new interface at the NW growth front. The generated results enable insights into fundamental processes occurring in the seed particle during growth, creating leverage points for controlling the NW morphology.

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Nanoscale aluminum plasmonic waveguide with monolithically integrated germanium detector

Cited by 21 publications

References 31 publications

Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal–Semiconductor Nanojunctions

Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal–Semiconductor Nanojunctions

IR hot carrier based photodetection in titanium nitride oxide thin film-Si junctions

Direct Observation of Liquid–Solid Two‐Phase Seed Particle‐Assisted Kinking in GaP Nanowire Growth

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