Nanoscale Electrodes for Flexible Electronics by Swelling Controlled Cracking

Zhao, Qiang; Wang, Wenjun; Shao, Jinyou; Li, Xiangming; Tian, Hongmiao; Liu, Lu; Mei, Xuesong; Ding, Yucheng; Lu, Bingheng

doi:10.1002/adma.201601007

Cited by 39 publications

(29 citation statements)

References 61 publications

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“…Fabrication of coplanar asymmetric tip‐to‐edge metal‐based nanostructure with sub‐10 nm air channel and tip‐to‐edge height difference is beyond the ability of conventional semiconductor technologies and the existing nanogap fabricating technologies. [ 48 ] Currently emerging nanogap fabrication routes including typical breaking‐/cracking‐based methods [ 49–53 ] are limited to fabricating symmetric nanogaps with restricted materials. Recently developed adhesion lithography [ 38–44 ] is generally used to produce coplanar material‐asymmetric nanogaps in geometrically symmetric side‐to‐side form, suffering from restricted materials and larger than 10 nm gap spacing.…”

Section: Resultsmentioning

confidence: 99%

Sub‐Picosecond Nanodiodes for Low‐Power Ultrafast Electronics

Li¹,

Zhang²,

He³

et al. 2021

Advanced Materials

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The tradeoff between ultrahigh speed and low power is a dominant challenge in continuously improving modern electronics. Fundamental electronic devices with ultrafast response are highly desired in low‐power electronics. However, conventional semiconductor electronic devices now near the speed limit from the physical roadblocks including short‐channel effect, restricted carrier velocity, and heat death. Currently emerging electronic devices also face formidable difficulties to achieve high‐speed performance at low operating voltage without heat disturbance. Here, a novel fabricated coplanar tip‐to‐edge semiconductor‐free nanostructure with asymmetric sub‐10 nm air channel is reported, stimulating electric‐field accelerated scattering‐free transport of electrons and resulting in ultrafast response of record sub‐picoseconds at a low turn‐on voltage around 0.7 V. Simulation results show a typical electrical response down to 64 fs, which is ≈103 times faster than that of conventional semiconductor electronic devices. The coplanar asymmetric nanostructure allows a high rectifying ratio up to 106 which is superior to that of the most promising 2D semiconducting nanodiodes. In addition, heat death is overcome due to the inherent advantages from the novel nanostructure and underlying working mechanism. The intriguing nanodiodes will attract broadly interests in electronics due to their potential as rudimentary building blocks in ultrafast electronic integrated circuits.

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Section: Resultsmentioning

confidence: 99%

Sub‐Picosecond Nanodiodes for Low‐Power Ultrafast Electronics

Li¹,

Zhang²,

He³

et al. 2021

Advanced Materials

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“…However, relatively low yields (≈7%) and difficulties in controlling the morphology of the nanogap interfaces remain significant problems. In addition to strain‐induced cracking methods, there are some preliminary reports describing the use of swelling controlled cracking, [ 108 ] intergranular fracturing, [ 109 ] and optical breakdown [ 110 ] which, although relatively unstudied, may have significant potential for array‐based fabrication.…”

Section: Alternative and Emerging Approachesmentioning

confidence: 99%

Scalable Fabrication of Metallic Nanogaps at the Sub‐10 nm Level

et al. 2021

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Metallic nanogaps with metal-metal separations of less than 10 nm have many applications in nanoscale photonics and electronics. However, their fabrication remains a considerable challenge, especially for applications that require patterning of nanoscale features over macroscopic length-scales. Here, some of the most promising techniques for nanogap fabrication are evaluated, covering established technologies such as photolithography, electron-beam lithography (EBL), and focused ion beam (FIB) milling, plus a number of newer methods that use novel electrochemical and mechanical means to effect the patterning. The physical principles behind each method are reviewed and their strengths and limitations for nanogap patterning in terms of resolution, fidelity, speed, ease of implementation, versatility, and scalability to large substrate sizes are discussed.

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“…However, close investigation on cracking phenomena and its possible applications have demonstrated cracks as useful features for device fabrication, [22][23][24][25] for growth of nanowires or to form nanochannels, 26,27 as a tool for controlled patterning during thin lm deposition 28 and as microuidic channels. 29,30 There are some published reports on crack based lithography. [31][32][33][34] Dubois et al have shown crack junctions dening nanogap in titanium nitride (TiN).…”

Section: Introductionmentioning

confidence: 99%