2010
DOI: 10.1002/smll.201000902
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Nanoscale Engineering and Optical Addressing of Single Spins in Diamond

Abstract: The artificial creation of shallow nitrogen‐vacancy (NV) centres in diamond with 25 nm lateral resolution is performed by collimated implantation of low‐energy nitrogen ions. The electron spin associated to this defect is the most promising qubit for a scalable quantum computer working at room temperature. Individual optical addressing of two single centres separated by only 16 nm is demonstrated with stimulated emission depletion (STED) microscopy.

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Cited by 110 publications
(105 citation statements)
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“…For NV implantation, focused ion beams [29,30] or nanoimplantation [31] (through a nanoscopic hole in an atomic force microscope tip), further enable a lateral placement of NV centers with a precision around 100 nm or 25 nm, respectively. Given a suitable annealing treatment, NV centers created via ion implantation have narrow, stable optical resonances [32] , approaching natively occurring centers, a property highly crucial considering the coupling to high-quality cavity resonances.…”
Section: Nv Centersmentioning
confidence: 99%
“…For NV implantation, focused ion beams [29,30] or nanoimplantation [31] (through a nanoscopic hole in an atomic force microscope tip), further enable a lateral placement of NV centers with a precision around 100 nm or 25 nm, respectively. Given a suitable annealing treatment, NV centers created via ion implantation have narrow, stable optical resonances [32] , approaching natively occurring centers, a property highly crucial considering the coupling to high-quality cavity resonances.…”
Section: Nv Centersmentioning
confidence: 99%
“…The nanopillar spacing ( ≳ 250 nm) is such that quantum sensing can be performed on the single NV centers in each simultaneously using diffraction-limited wide-field optical detection and microwave control. Nanopillar arrays of this kind could be fabricated by combining existing diamond etching 27 and high resolution NV creation [31][32][33] force vector image will have a spatial resolution defined by the size of the superpixels (ie. ≳500 nm), and using our previous estimates, will achieve a force resolution of 100 pN after ~1 s of measurement time.…”
mentioning
confidence: 99%
“…Low (a few keV) energy is necessary for achieving a positioning accuracy in the nanometer range, however the yield of conversion of nitrogen to NV centres during annealing is low in this case (a few percents, due to an insuffcient number of vacancies, to surface trapping of vacancies during annealing, and to higher NV 0 /NV -ratio). A striking recent demonstration [32] shows that high spatial accuracy of NV implantation can be realised using novel implantation/detection technology. Since dopants are buried into the diamond lattice, scanning probe techniques like AFM or STM cannot be used to characterise the created arrays.…”
Section: Materials and Defects Synthesismentioning
confidence: 99%
“…Consequently, the successful application of existing high resolution techniques on the NV centres has paved the way for many NV based applications which were not possible before. The demonstration of STED with NV centre opened new avenues both in terms of nanofabrication [32] of NV centres and in terms of spin manipulation without diffraction limitation. The fi rst application of STED microscopy using albuminconjugated fl uorescent NDs has been recently demonstrated [60] .…”
Section: Nanoscopy and Sub-diffraction Imagingmentioning
confidence: 99%