Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry

Dorp, Dennis H. van; Arnauts, Sophia; Laitinen, Mikko; Sajavaara, Timo; Meersschaut, Johan; Conard, Thierry; Kelly, John J.

doi:10.1016/j.apsusc.2018.09.181

Cited by 13 publications

(10 citation statements)

References 56 publications

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“…As a result, InP can be more effectively passivated than GaAs. The resulting higher chemical stability of InP surfaces can be attributed to a higher acidity of surface P–OH groups as compared to As–OH, favoring oxide bridging . On the basis of these findings, we speculate that GaAs may be inherently more difficult to passivate than InP.…”

Section: Discussionmentioning

confidence: 81%

Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation

Dorp

Nyns

Cuypers

et al. 2019

ACS Appl. Electron. Mater.

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The passivation of n-type InP (100) using sulfur in combination with a gadolinium aluminate (GAO) dielectric layer has been studied. Photoluminescence, minority-carrier lifetime, and capacitance–voltage measurements indicate that a (NH4)2S vapor passivation step prior to atomic layer deposition of the oxide effectively lowers the interface state density. Surface and interface chemistry were studied by synchrotron radiation photoemission spectroscopy (SRPES). The effect of ex situ surface passivation after native oxide removal in HCl solution was examined. It was observed that surface reoxidation occurred during (NH4)2S vapor exposure, leading to the formation of In x (HPO4) y . S was present on the surface as a sulfide in both surface and subsurface sites. After atomic layer deposition of GAO, sulfates were detected in addition to In x (HPO4) y , which was confirmed by near-edge X-ray absorption fine structure analysis. The S in the stack was quantified using reference-free grazing incidence X-ray fluorescence analysis. X-ray absorption spectroscopy showed that Gd was oxidized and present in the 3+ oxidation state, most likely as a phosphate close to the InP interface and possibly mixed with sulfates. Energy-dependent SRPES measurements of Al 2p and Gd 4d core levels, complemented by transmission electron microscopy, further suggest that the dielectric layer was segregated. Valence band measurements confirm the effective passivation of InP, indicating unpinning of the surface Fermi level.

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Section: Discussionmentioning

confidence: 81%

Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation

Dorp

Nyns

Cuypers

et al. 2019

ACS Appl. Electron. Mater.

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“…50 Fascinatingly, the Cl − ion has demonstrated similar passivation effects for the wet etching of III-V semiconductors, specifically, GaAs, InGaAs and InAs. [51][52][53] However, the influence of surface chlorides on the etching kinetics of III-As was already substantial in the range of 0.01-1 M HCl. This difference is ascribed to the relative stability of surface (hydr)oxides.…”

Section: Resultsmentioning

confidence: 99%

“…The halide ion thereby acts as a leveling agent. 48,52,53 Wet etching of Ge (100) in HCl/H 2 O 2 solution: surface chemistry.-To further understand the chemical reactions that underly the etching process of Ge, surface composition analysis was performed by ex situ XPS for two etchants: 1 M/10 mM H 2 O 2 and 0.01 M HCl/10 mM H 2 O 2 . The O 1s core level spectra (Fig.…”

Section: Resultsmentioning

confidence: 99%

Wet Chemical Processing of Ge in Acidic H₂O₂ Solution: Nanoscale Etching and Surface Chemistry

Abrenica

Fingerle

Лебедев

et al. 2020

ECS J. Solid State Sci. Technol.

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Herein, we investigate wet-chemical etching of Ge (100) in acidic H2O2 solutions for technologically advanced device processing. Nanoscale etching kinetics data were provided by inductively coupled plasma mass spectrometry (ICP-MS) measurements. Rotation rate- dependent measurement showed that the hydrodynamics of the system is important. The dependence of the etch rate on the HCl concentration was considered for the range 0.001–1 M HCl. A stark difference morphologically for >1 M HCl, which resulted in a rough surface confirmed by atomic force microscopy (AFM) images, has been observed. X-ray photoelectron spectroscopy (XPS) measurements provided insight in the surface chemistry of etching for device processing. Electrochemical measurements confirmed that the etching process follows a chemical mechanism. Based on X-ray photoelectron spectroscopy (XPS) data, we present reaction schemes that help to understand the results.

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“…Hydrogen peroxide (HOOH) is well-known as an important oxidizing agent with vast proven applications in various fields, including chemical syntheses, 1,2 medical surgery, 3,4 waste-water treatment, 5,6 sterilization of viruses, 7 semi-conductor etching, 8,9 mining and metal processing, 10,11 as well as textile bleaching. 12,13 As a green and versatile oxidizing agent, HOOH has been widely used as an antiseptic in medical applications, for example, in the direct treatment on skin surfaces and indirect use in sterilizing surgical tools.…”

Section: Introductionmentioning

confidence: 99%

Dissociation of hydrogen peroxide in water and methanol through a biased molecular dynamics investigation

Dong

Nguyen

et al. 2021

J Comput Chem

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The two dissociation channels of HOOH, namely, HO OH and H OOH, in water and methanol are investigated using umbrella-sampling ab initio molecular dynamics.Our potential of mean force calculations reveals the HO OH dissociation to be more favorable in methanol with a free energy barrier of 7.56 kcal/mol, while the H OOH dissociation possesses a free energy barrier of 11.46 kcal/mol. In water, the H OOH dissociation channel is more favorable (8.25 kcal/mol), while the HO OH dissociation process requires a higher free energy (11.28 kcal/mol). Such reaction favorability can be explained by inspecting the formation of secondary radical species during the course of multiple hydrogen donating-accepting processes in each reaction channel. The radical species, that is, H 3 O • (observed in water) and CH 3 OH 2 • (observed in methanol), are the first subordinate species upon the HOO H dissociation. For the HO OH dissociation channel in methanol, the secondary species such as water and formaldehyde can be observed, while the re-generation of HOOH in water can be spotted.

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Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry

Abstract: This is a self-archived version of an original article. This version may differ from the original in pagination and typographic details.

Cited by 13 publications

References 56 publications

Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation

Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation

Wet Chemical Processing of Ge in Acidic H₂O₂ Solution: Nanoscale Etching and Surface Chemistry

Dissociation of hydrogen peroxide in water and methanol through a biased molecular dynamics investigation

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Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry

Abstract: This is a self-archived version of an original article. This version may differ from the original in pagination and typographic details.

Cited by 13 publications

References 56 publications

Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation

Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation

Wet Chemical Processing of Ge in Acidic H2O2 Solution: Nanoscale Etching and Surface Chemistry

Dissociation of hydrogen peroxide in water and methanol through a biased molecular dynamics investigation

Contact Info

Product

Resources

About

Wet Chemical Processing of Ge in Acidic H₂O₂ Solution: Nanoscale Etching and Surface Chemistry