Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector

Xia, Hui; Li, Tianxin; Tang, Hengjing; Zhu, Liang; Li, Xue; Gong, Haimei; Lü, Wei

doi:10.1038/srep21544

Cited by 20 publications

(9 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Here, we offer a distinct routine - Scanning Capacitance Microscopy (SCM), a demonstrated technique for analyzing the polarity, concentration, and distribution of mobile charge carriers with nanoscale resolution 20 . The experimental setup is illustrated in Fig.…”

Section: Resultsmentioning

confidence: 99%

Pristine PN junction toward atomic layer devices

et al. 2022

Self Cite

View full text Add to dashboard Cite

In semiconductor manufacturing, PN junction is formed by introducing dopants to activate neighboring electron and hole conductance. To avoid structural distortion and failure, it generally requires the foreign dopants localize in the designated micro-areas. This, however, is challenging due to an inevitable interdiffusion process. Here we report a brand-new junction architecture, called “layer PN junction”, that might break through such limit and help redefine the semiconductor device architecture. Different from all existing semiconductors, we find that a variety of van der Waals materials are doping themselves from n- to p-type conductance with an increasing/decreasing layer-number. It means the capability of constructing homogeneous PN junctions in monolayers’ dimension/precision, with record high rectification-ratio (>105) and low cut-off current (<1 pA). More importantly, it spawns intriguing functionalities, like gate-switchable-rectification and noise-signal decoupled avalanching. Findings disclosed here might open up a path to develop novel nanodevice applications, where the geometrical size becomes the only critical factor in tuning charge-carrier distribution and thus functionality.

show abstract

Section: Resultsmentioning

confidence: 99%

Pristine PN junction toward atomic layer devices

et al. 2022

Self Cite

View full text Add to dashboard Cite

show abstract

“…So far SCM method was successfully applied for characterization of both, crystalline and multicrystalline silicon based solar cells, cadmium telluride and copper indium gallium selenide solar cells . In case of III‐V semiconductors the characterization results of InGaAs/InP infrared photodetectors , GaAs pn junctions with embedded ErAs nanoparticles or InAs quantum dots in GaAs matrix were reported . Here, for the first time we present cross‐sectional SCM investigation of individual components of III‐V tandem solar cell.…”

Section: Introductionmentioning

confidence: 98%

A cross‐sectional scanning capacitance microscopy characterization of GaAs based solar cell structures

Szyszka

Dawidowski

Stafiniak

et al. 2017

Crystal Research and Technology

View full text Add to dashboard Cite

Scanning Capacitance Microscopy was applied in investigation of individual components of tandem solar cell. The InGaAs tunnel junction, GaAs top subcell and GaAsN bottom subcell devices were grown by atmospheric pressure metalorganic vapour phase epitaxy. It was shown that accuracy of p‐n junction position determination by SCM method depends on doping concentration of layers in structure and measurement parameters.

show abstract

“…As a typical III-V compound, In x Ga 1−x As is one of the most important semiconductor materials 1 2 . Because of their excellent photoelectric properties, III-V compound films have been widely used in t infrared detectors 3 4 , solar cells 5 6 , transistors 2 7 , optical switches 8 and optical fibre communications devices 9 . Compared to other In x Ga 1−x As films, films of high-In-content semiconductor, such as In 0.82 Ga 0.18 As, which has a long cut-off wavelength (more than 2 μm) in spectroscopic applications, have attracted more attention 10 11 .…”

mentioning

confidence: 99%

The relationship between the dislocations and microstructure in In0.82Ga0.18As/InP heterostructures

Zhao

Guo

Wei

et al. 2016

Sci Rep

View full text Add to dashboard Cite

In this work, we propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In0.82Ga0.18As/InP heterostructure. The In0.82Ga0.18As epitaxial layers were grown on the InP (100) substrate at various temperatures (430 °C, 410 °C and 390 °C) using low pressure metalorganic chemical vapor deposition (LP-MOCVD). Obvious protrusions and depressions were obseved on the surface of the In0.82Ga0.18As/InP heterostructure because of the movement of dislocations from the core to the surface. The surface morphologies of the In0.82Ga0.18As/InP (100) system became uneven with increasing temperature, which was associated with the formation of dislocations. Such research investigating the dislocation of large lattice mismatch heterostructures may play an important role in the future-design of semiconductor films.

show abstract

Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector

Cited by 20 publications

References 41 publications

Pristine PN junction toward atomic layer devices

Pristine PN junction toward atomic layer devices

A cross‐sectional scanning capacitance microscopy characterization of GaAs based solar cell structures

The relationship between the dislocations and microstructure in In0.82Ga0.18As/InP heterostructures

Contact Info

Product

Resources

About