Nanoscale pattern transfer for templates, NEMS, and nano-optics

Olynick, Deirdre L.; Liddle, J. Alexander; Harteneck, B.; Cabrini, Stefano; Rangelow, Ivo W.

doi:10.1117/12.705033

Cited by 10 publications

(8 citation statements)

References 26 publications

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“…Its most notable merits include a high etching rate (up to 5 mm/min), high selectivity in the photoresist-mask process, and the fact that it can be conducted at room temperature. 11 Moreover, the excellent reproducibility of the process among different silicon wafers shows that it has good process stability.…”

Section: Introductionmentioning

confidence: 99%

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Tao

et al. 2017

Advances in Mechanical Engineering

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This study empirically investigates the influences of several parameters on surface morphology and etch rate in a high-aspect-ratio silicon etching process. Two function formulas were obtained, revealing the relationship between the controlled parameters and the etching results. All the experiments were conducted on an inductively coupled plasma system, using a Bosch process. The tested trenches' width ranged from 15 to 1500 mm and their depth ranged from 50 to 500 mm, which covers nearly all the typical sizes of micromechanical devices in practical applications. The controlled parameters are etching chamber pressure, bias power, and gas flow rate. The parameters of surface morphology include sidewall angle, surface roughness, and sidewall condition. We tested how the controlled parameters can influence the surface morphology and etch rate and formulated assumptions to explain those relationships. Meanwhile, we utilized linear regression to obtain experiential function formulas of the relationships among etch depth, structure width, etching time, and passivation time, with a correlation coefficient higher than 0.99. Using these formulas, 12-mm-wide and 377-mm-deep (aspect ratio 31.4) trenches with sidewall angles of 89°were achieved. Additionally, this experience was applied as a critical structure in a gas turbine structure system.

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Section: Introductionmentioning

confidence: 99%

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Tao

et al. 2017

Advances in Mechanical Engineering

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“…As a result of the above described processes, the etching proceeds only in vertical direction (ion bombardment direction) and an anisotropic profile can be achieved. [13,18,[20][21][22][23]. Figure 4 depicts the principle of cryogenic etching.…”

Section: Cryogenic Etchingmentioning

confidence: 99%

Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers

Hofmann¹

2018

NANO

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High performance single nanometer lithography is an enabling technology for beyond CMOS devices. In this terms a novel mask-and development-less patterning scheme by using electric field, current controlled Scanning Probe Lithography (FE-SPL) in order to pattern structures on different samples was developed. This work aims to manufacture nanostructures into different resist by using FE-SPL, whereas plasma etching at cryogenic temperatures is applied for an efficient pattern transfer into the bottom Si substrate. The challenge for future quantum devices, generated by SPL and cryogenic etching, is finding a resist that is at most 10 nm in thickness and has a plasma durability high enough for pattern transfer into silicon. As a first step towards future quantum devices the silicon-to-resist selectivity of calixarene, AZ Barli, poly (3-hexylthiophen-2, 5-diyl) and polymethylmethacrylat for the anisotropic cryogenic dry etching process was estimated. A silicon-to-resist selectivity of about 4:1 for each of these resists was found. With these results, nano-scale, highly parallel double line features in silicon for future double patterning were generated.

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“…Thus, fluorine can react spontaneously with silicon on the bottom of the feature, forming volatile SiF4 molecules which desorb from the surface. As a result of these processes, the etching proceeds only in vertical direction (ion bombardment direction) and an anisotropic profile can be achieved 31,[33][34][35][36] . Furthermore Mellaoui et al 37 have demonstrated that after a temperature increase, the previously non-volatile SiOxFy becomes volatile and leads to smooth silicon sidewalls.…”

Section: Rie -Fagmentioning

confidence: 99%

Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions

Rangelow

Lenk

Hofmann

et al. 2018

Novel Patterning Technologies 2018

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Cost-effective generation of single-digit nano-lithographic features could be the way by which novel nanoelectronic devices, as single electron transistors combined with sophisticated CMOS integrated circuits, can be obtained. The capabilities of Field-Emission Scanning Probe Lithography (FE-SPL) and reactive ion etching (RIE) at cryogenic temperature open up a route to overcome the fundamental size limitations in nanofabrication. FE-SPL employs Fowler-Nordheim electron emission from the tip of a scanning probe in ambient conditions. The energy of the emitted electrons (<100 eV) is close to the lithographically relevant chemical excitations of the resist, thus strongly reducing proximity effects. The use of active, i.e. self-sensing and self-actuated, cantilevers as probes for FE-SPL leads to several promising performance benefits. These

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Nanoscale pattern transfer for templates, NEMS, and nano-optics

Cited by 10 publications

References 26 publications

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers

Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions

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