Nanoscale SOI MOSFETs with electrically induced source/drain extension: Novel attributes and design considerations for suppressed short-channel effects

Orouji, Ali A.; Kumar, M. Jagadesh

doi:10.1016/j.spmi.2005.08.020

Cited by 23 publications

(12 citation statements)

References 23 publications

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“…«ростовые» деформационные поля, которые возникают вследствие различия постоянных кристаллической решетки (a) и температурных коэффициентов линейного расширения ( ) слоя и подложки [15][16][17][18][19]. Яр-ким примером практического использования ростовых деформаций является применение напряженных слоев Si и SiGe для увеличения по-движности носителей или создания инверсной заселенности в лазерных структурах.…”

Section: Discussionunclassified

CHARACTERISTICS OF BORON ION IMPLANTED CdHgTe/CdZnTe HETEROSTRUCTURES

Smirnov¹,

Savkina²,

Udovitska³

et al. 2012

SEMST

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Section: Discussionunclassified

CHARACTERISTICS OF BORON ION IMPLANTED CdHgTe/CdZnTe HETEROSTRUCTURES

Smirnov¹,

Savkina²,

Udovitska³

et al. 2012

SEMST

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“…Therefore, numerous researchers have conducted extensive and in-depth research on SOI devices in recent years. [11][12][13] For the purpose of reducing the leakage current and improving SCEs of the SOI MOSFET, our focus is on modifying the channel potential distribution to better control channel conduction when the device is operated in the subthreshold region. As is known to all, an effective method for reducing a disadvantageous SCEs is doped the channel with a higher dose of impurities.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional analytical model for fully depleted SOI MOSFETs with vertical trapezoid doping including effects of the interface trapped charges

Xu,

Cui,

et al. 2023

Jpn. J. Appl. Phys.

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The two-dimensional (2D) potential distribution for vertical trapezoidal doping thin-body fully depleted (FD) silicon-on-insulator (SOI) devices is derived by adopting the evanescent mode analysis method, in which the 2D effects in gate oxide region, channel region and buried oxide region are taken into account. Moreover, the effects of interface trapped charge are considered. Using this potential model, the subthreshold performance of the device including subthreshold current, and subthreshold swing under various conditions have been studied. The result shows that the analytical model is good agreement with the simulated results. Therefore, it provides a feasible way of developing new 2D models for vertical trapezoidal doping thin-body FD SOI devices. Besides offering the physical insight into device physics, the analytical model provides the basic designing guidance for vertical trapezoidal doping thin-body FD SOI devices.

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“…An example of the efficient application of growth-induced strains is given by CMOS transistors, in which the substantial deformations in the channel region are obtained by combining strained Si and SiGe layers. As a result, the mobility of charge carriers increases [1,2]. A substantial improvement of light-emitting characteristics is observed at low excitation levels for quantum wells fabricated on the basis of A 3 B 5 compounds and compressively stressed in the heterojunction plane, which occurs owing to the creation of conditions for inverse level population [3].…”

Section: Introductionmentioning

confidence: 99%

Role of Mechanical Stresses at Ion Implantation of CdHgTe Solid Solutions

et al. 2013

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The properties of n-CdxHg1−xTe/CdZnTe (x ≈ 0.223) structures implanted with B + and Ag + ions with an energy of 100 keV to a dose of 3 × 10 13 cm −2 are studied. The software package TRIM_2008 was applied to simulate the ion implantation process. The surface morphology of heterostructures and their optical, mechanical and electrical properties are studied. It is found that the ion irradiation of specimens gives rise to the formation of a characteristic relief on their surface, as well as a layer in the near-surface region, where the optical parameters differ from those in the matrix. The implantation of CdxHg1−xTe epitaxial layers with boron and silver ions with the same energy and to the same dose brings about the formation of a damaged layer, substantially non-uniform by the thickness and the damage character, with maximum mechanical stresses that differ by two orders of magnitude. The values of the crystal lattice contraction coefficient β and the mechanical stresses σmax in the region of radiation-induced disordering in the solid solution are determined. The influence of mechanical stresses in the doped layer on the defect redistribution and the formation of properties of Cd0.223Hg0.777Te after the implantation is discussed.

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Nanoscale SOI MOSFETs with electrically induced source/drain extension: Novel attributes and design considerations for suppressed short-channel effects

Cited by 23 publications

References 23 publications

CHARACTERISTICS OF BORON ION IMPLANTED CdHgTe/CdZnTe HETEROSTRUCTURES

CHARACTERISTICS OF BORON ION IMPLANTED CdHgTe/CdZnTe HETEROSTRUCTURES

Two-dimensional analytical model for fully depleted SOI MOSFETs with vertical trapezoid doping including effects of the interface trapped charges

Role of Mechanical Stresses at Ion Implantation of CdHgTe Solid Solutions

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