Nanoscale Tunnel Field-Effect Transistor Based on a Complex-Oxide Lateral Heterostructure

Abstract

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Electronic properties of size-dependent MoTe2/WTe2 heterostructure*

“…Heterostructures consisting of dissimilar materials have been the indispensable elements in modern electronics, including spin valve, [1] photovoltaics, [2] field-effect transistor, [3] energy harvester, [4] etc. Looking beyond conventional threedimensional (3D) semiconductors, creating two-dimensional (2D) heterostructures may provide unprecedented opportunities in device processing and engineering.…”

LaAlO3/SrTiO3 Heterointerface: 20 Years and Beyond

“…Müller et al have demonstrated a lateral heterostructure comprising a narrow STO channel between two LAO/STO contacts conducts at bias voltages significantly below 100 mV. [128] It is further demonstrated in the study that the tunnelling current can be easily controlled small gate-source voltages applied between a side gate and the channel. This study involving a [126] Copyright 2020, IOP Publishing Ltd.…”

Promises of Main-Group Metal Chalcogenide-Based Broken-Gap van der Waals Heterojunctions for Tunneling Field Effect Transistors

“…To overcome this thermal subthreshold limit, a band-to-band tunneling field effect transistor (TFET) is developed in recent years. − In contrast to conventional FETs, the primary mechanism in TFETs , is interband tunneling rather than thermal injection. Consequently, TFETs can achieve a steeper-subthreshold slope with SS < 60 mV/dev. − Accordingly, the power consumption in TFETs can be effectively decreased. However, one challenge of TEFTs is that all fabricated TEFTs have severely limited ON-current.…”