Nanoscratch-induced phase transformation of monocrystalline Si

Wu, Yueqin; Huang, Han; Zou, Jin; Zhang, L.C.; Dell, John

doi:10.1016/j.scriptamat.2010.06.034

Cited by 89 publications

(55 citation statements)

References 32 publications

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“…This has relevance in practical applications; for example, an amorphous layer always forms after mechanical polishing of single crystalline Si (c-Si) wafers, causing damage that degrades the performance of integrated circuits and electronic devices. 7,8 The CAT has also been recognized to have a role in the incipient plasticity of bulk c-Si at room temperature. 7,9,10 Stressinduced CAT in Si has in fact been widely observed under various mechanical loading conditions, such as indentation, 6,[10][11][12][13][14][15] ball milling, 16,17 scratching 2,7 and bending.…”

Section: Introductionmentioning

confidence: 99%

In situ TEM study of deformation-induced crystalline-to-amorphous transition in silicon

et al. 2016

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The mechanism responsible for deformation-induced crystalline-to-amorphous transition (CAT) in silicon is still under considerable debate, owing to the absence of direct experimental evidence. Here we have devised a novel core/shell configuration to impose confinement on the sample to circumvent early cracking during uniaxial compression of submicron-sized Si pillars. This has enabled large plastic deformation and in situ monitoring of the CAT process inside a transmission electron microscope. We demonstrate that diamond cubic Si transforms into amorphous silicon through slip-mediated generation and storage of stacking faults (SFs), without involving any intermediate crystalline phases. By employing density functional theory simulations, we find that energetically unfavorable single-layer SFs create very strong antibonding interactions, which trigger the subsequent structural rearrangements. Our findings thus resolve the interrelationship between plastic deformation and amorphization in silicon, and shed light on the mechanism underlying deformation-induced CAT in general.

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Section: Introductionmentioning

confidence: 99%

In situ TEM study of deformation-induced crystalline-to-amorphous transition in silicon

et al. 2016

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“…However, the friction coefficient is only 0.07 at yield on Si so the effect was rather small, with critical loads for yield (first pop-in) being (40 ± 5) mN in indentation and (37 ± 5) mN in nano-scratch. Wu and co-workers noted a reduction in the critical load for phase transformation in nano-scratching compared to nanoindentation [42].…”

Section: Discussionmentioning

confidence: 99%

Nano-scratch, nanoindentation and fretting tests of 5–80nm ta-C films on Si(100)

Beake¹,

Davies²,

Liskiewicz³

et al. 2013

Wear

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Wear and stiction forces limit the reliability of Silicon-based micro-systems when mechanical contact occurs. Ultra-thin filtered cathodic vacuum arc (FCVA) ta-C films are being considered as protective overcoats for Si-based MEMS devices. Fretting, nano-scratch and nanoindentation of different thickness (5, 20 and 80 nm) ta-C films deposited on Si(100) has been performed using spherical indenters to investigate the role of film thickness, tangential loading, contact pressure and deformation mechanism in the different contact situations. The influence of the mechanical properties and phase transformation behaviour of the silicon substrate in determining the tribological performance (critical loads, damage mechanism) of 2 the ta-C film coated samples has been evaluated by comparison with previously published data on uncoated Silicon. The small scale fretting wear occurs at significantly lower contact pressure than is required for plastic deformation and phase transformation in nanoindentation and nano-scratch testing. There is a clear correlation between the fretting and nano-scratch test results despite the differences in contact pressure and failure mechanism in the two tests.In both cases increasing film thickness provides more load support and protection of the Si substrate. Thinner films offer significantly less protection, failing at lower load in the scratch test and more rapidly and/or at lower load in the fretting test.

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“…For Si nanoindentation, a softer amorphous phase was usually formed at the topmost surface layer [16][17][18]. This fact is attributed to the amorphous phase having a lower energy under mechanical loading, compared with other high-pressure phases [3,26,27]. The volume of the amorphous is larger than that of the single-crystal phase.…”

Section: Discussionmentioning

confidence: 99%

Mechanical properties of nanocrystalline deformed layers induced by nanogrinding of CdZnTe single crystals

Zhou

Wang

Song

et al. 2012

Philosophical Magazine Letters

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Nanocrystalline deformed layers were generated in cadmium zinc telluride (CZT) single crystals by nanogrinding using three different grit sizes. The mechanical properties of the deformed layers were measured using nanoindentation. The hardness of the deformed nanocrystalline layers in the soft-brittle CZT semiconductor was higher than that of the perfect single crystal. This result is different from those found for deformed layers of hard-brittle silicon semiconductors, where the hardness of the deformed layers is lower than those of the perfect single crystal.

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Nanoscratch-induced phase transformation of monocrystalline Si

Cited by 89 publications

References 32 publications

In situ TEM study of deformation-induced crystalline-to-amorphous transition in silicon

In situ TEM study of deformation-induced crystalline-to-amorphous transition in silicon

Nano-scratch, nanoindentation and fretting tests of 5–80nm ta-C films on Si(100)

Mechanical properties of nanocrystalline deformed layers induced by nanogrinding of CdZnTe single crystals

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