Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Puybaret, Renaud; Patriarche, G.; Jordan, Matthew B.; Gmili, Youssef El; Salvestrini, Jean Paul; Voss, Paul L.; Heer, Walt A. de; Berger, Claire; Ougazzaden, A.

doi:10.1063/1.4943205

Cited by 19 publications

(8 citation statements)

References 40 publications

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“…With technical progress, nano-SAG methods, known as nanoheteroepitaxy (NHE), , have emerged to provide another way to achieve both TDD reduction and strain release at the initial growth stage on the condition of small nucleus size (10–100 nm). − However, the current TDD level of NHE (rarely less than 1 × 10 8 cm –2 without complex methods) is roughly equivalent to that of PSS. − Presumably, NHE effect is compromised with the prevailing feature size of 200–500 nm, while one can hardly obtain large-area sub-100 nm patterns at low cost so far. Besides, threading dislocations (TDs) formed after the initial growth cannot be terminated effectively, since lateral growth is confined in nanoscale narrow space.…”

Section: Introductionmentioning

confidence: 99%

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask

Feng

Wei

et al. 2016

ACS Appl. Mater. Interfaces

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A novel nanoheteroepitaxy method, namely, the grouped and multistep nanoheteroepitaxy (GM-NHE), is proposed to attain a high-quality gallium nitride (GaN) epilayer by metal-organic vapor phase epitaxy. This method combines the effects of sub-100 nm nucleation and multistep lateral growth by using a low-cost but unique carbon nanotube mask, which consists of nanoscale growth windows with a quasi-periodic 2D fill factor. It is found that GM-NHE can facilely reduce threading dislocation density (TDD) and modulate residual stress on foreign substrate without any regrowth. As a result, high-quality GaN epilayer is produced with homogeneously low TDD of 4.51 × 10(7) cm(-2) and 2D-modulated stress, and the performance of the subsequent 410 nm near-ultraviolet light-emitting diode is greatly boosted. In this way, with the facile fabrication of nanomask and the one-off epitaxy procedure, GaN epilayer is prominently improved with the assistance of nanotechnology, which demonstrates great application potential for high-efficiency TDD-sensitive optoelectronic and electronic devices.

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Section: Introductionmentioning

confidence: 99%

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask

Feng

Wei

et al. 2016

ACS Appl. Mater. Interfaces

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“…(c) SEM images of 30nm thick GaN grown on 4H-SiC using punctured graphene as a mask (From Ref. 16 ). No GaN grows on graphene, as exemplified on the right side of the image.…”

Section: Discussionmentioning

confidence: 99%

“…Scale bar is 10 μm. (c) SEM images of 30nm thick GaN grown on 4H-SiC using punctured graphene as a mask (From Ref 16. ).…”

mentioning

confidence: 99%

Epitaxial Graphene on SiC: 2D Sheets, Selective Growth, and Nanoribbons

Berger¹,

Deniz²,

Gigliotti³

et al. 2017

Growing Graphene on Semiconductors

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Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of 4H-SiC and on directed and selectively grown structures under growth-arresting or growth-enhancing masks. Recent developments in the growth of templated graphene nanostructures are also presented, as exemplified by tens of micron long very well confined and isolated 20-40nm wide graphene ribbons. Scheme for large scale integration of ribbon arrays with Si wafer is also presented.

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“…Apart from flexible applications, vdWE of III‐nitride can also be implemented for the fabrication of high‐performance III‐nitride devices. For example, 2D materials can be used as a mask in the epitaxial lateral overgrowth process . The threading dislocations can be effectively blocked and merged on the 2D material surface in the initial growth stages, and high crystalline quality of III‐nitrides can be achieved.…”

Section: Concluding Remarks and Outlookmentioning

confidence: 99%

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Wang

Hao

et al. 2019

Advanced Materials

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to 6.2 eV for AlN, [3] which spans the entire ultraviolet and visible band [4][5][6][7] as well as the near-infrared region. [8,9] Accordingly, III-nitrides have been widely adopted for the fabrication of light-emitting diodes (LEDs), [10][11][12] laser diodes (LDs), [13][14][15] photodetectors (PDs), [16][17][18] and solar cells. [19][20][21] Furthermore, the spontaneous and piezoelectric polarization in wurtzite semiconductors [22][23][24][25] and the high electron drift velocities [26][27][28] can be used to fabricate high electron mobility transistors based on two-dimensional (2D) electron gas (2DEG) in AlGaN/GaN heterostructures. [29][30][31][32] At present, by employing metal organic chemical vapor deposition (MOCVD), [3,[33][34][35] molecular beam epitaxy (MBE), [36][37][38][39] or hydride vapor phase epitaxy (HVPE), [40][41][42] III-nitride films with high crystalline quality can be obtained on c-plane sapphire, [43][44][45] Si (111), [38,[46][47][48] or 6H-SiC [49][50][51] substrates at a high growth temperature, usually above 1000 °C. [52][53][54] However, exfoliating III-nitride films from such single-crystalline substrates proves difficult because of the strong sp 3 -type covalent bonds between the substrates and epilayers. [55] To overcome this problem, thermal release through laser radiation, [56,57] stamp-based printing, [58,59] chemical etching, [60][61][62][63][64][65][66][67] and mechanical exfoliation [54,55,68,69] from singlecrystalline substrates have been investigated. However, there still remain some bottlenecks for future applications, such as damage, limited size, and tedious steps of the flexible production process. [55] Furthermore, flexible amorphous substrates generally cannot tolerate such high growth temperature, [54] and cannot be used for epitaxial growth of single-crystalline films because of the unordered surface atomic arrangement. [70,71] Hence, it is extremely difficult to make allowance for wearable and foldable applications of next-generation (opto)electronic devices based on III-nitrides. [72] On the other hand, sp 2 -bonded 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) exhibit hexagonal in-plane lattice arrangements and weakly bonded layers. [54,73,74] If sp 3 -bonded III-nitride films can somehow be grown on sp 2 -bonded 2D materials, it is theoretically possible to transfer these functional films onto foreign flexible substrates because of the weak van der Waals interactions on both sides of the 2D materials. [68,75,76] In this case, the 2D materials not only act as a buffer layer but also provide a release layer for the mechanical exfoliation of solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet t...

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Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Cited by 19 publications

References 40 publications

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask

Epitaxial Graphene on SiC: 2D Sheets, Selective Growth, and Nanoribbons

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

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