Nanoskiving Core–Shell Nanowires: A New Fabrication Method for Nano-optics

Abstract

This paper describes the fabrication of functional optical devices by sectioning quantum-dot-in-nanowires systems with predefined lengths and orientations. This fabrication process requires only two steps, embedding the nanowires in epoxy and using an ultramicrotome to section them across their axis ("nanoskiving"). This work demonstrates the combination of the following four capabilities: (i) the control of the length of the nanowire sections at the nanometer scale; (ii) the ability to process the nanowires after cutting using wet etching; (iii) the possibility of modifying the geometry of the wire by varying the sectioning angle; and (iv) the generation of as many as 120 consecutive slabs bearing nanowires that have uniform size and approximately reproducible lateral patterns and that can subsequently be transferred to different substrates. The quantum dots inside the nanowires are functional and of a high optical quality after the sectioning process and exhibit photoluminescent emission with wavelengths in the range of 650−710 nm.

Electrochemical Characterization of Ultrathin Cross-Linked Metal Nanoparticle Films

“…Figure S2 shows a photo of a Pt microring used to transfer NP films. 50 Alternatively, the film can be cleaned with oxygen plasma and subsequently cut into pieces to be used as individual electrodes. An optical image is also included in Scheme 1, showing an electrically contacted, semitransparent NP film on glass.…”

Quantum dots in the GaAs/AlxGa1−xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

“…The cross-sections were realized by embedding the as-grown NWs in epoxy and cleaving thin sections with an ultra-microtome. 27,28 Fig. 1(b) corresponds to the high-angle annular dark-field (HAADF) TEM image of the sample with a simple Al x Ga 1Àx As shell.…”

Probing inhomogeneous composition in core/shell nanowires by Raman spectroscopy

“…51 Compositional mappings of the nanowires were performed on cross-sections prepared by microtomy. 25,52 The structure and composition were characterized by combining high-angle annular dark field scanning transmission electron microscopy (STEM) and EDS or EDX in Figure 1. From the different contrasts, we can distinguish between the GaAs regions (lighter contrast) and Al x Ga 1Àx As regions (darker contrast).…”