Nanostructure of ZnO thin films prepared by reactive rf magnetron sputtering

Takai, Osamu; Futsuhara, Masanobu; Shimizu, Genki; Lungu, C.P.; Nozue, J.

doi:10.1016/s0040-6090(97)01148-6

Cited by 49 publications

(21 citation statements)

References 7 publications

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“…Pure and doped ZnO is one of the first suitable semiconductors widely used for sensing O 2 [1], H 2 [2], NO x [3][4][5], ethanol [6][7][8][9][10] and humidity [11], which shows instant change in electrical resistance when exposed to inflammable materials like organic solvent vapors, petrol vapors and methane gas that pose a threat to safety when they cross their thresholds limit in air. Most of research work deals with pure and doped ZnO thin film by rare earth atoms [11][12][13][14][15][16][17][18][19][20], and transition elements [21] encourage their use as gas *Corresponding author. E-mail: mazhar42pk@yahoo.com sensing devices [22], transparent electrodes [23] and piezoelectric devices [24].…”

Section: Introductionmentioning

confidence: 99%

“…The reason for decrease in resistivity can be explained by absorption of oxygen on the surface and grain boundaries of metal oxide at high temperatures. Film type sensor can be fabricated with various techniques such as spray pyrolysis, sputtering, laser ablation, sol-gel method and chemical vapor deposition [25,26]. In this work, a high efficiency gas sensing device has been modeled, designed, fabricated using ultrasonic aerosol assisted chemical vapor deposition technique and tested for ethanol vapor sensing.…”

Section: Introductionmentioning

confidence: 99%

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High efficiency ZnO nano sensor, fabrication and characterization

Hussain

Mazhara

Hussainb

et al. 2010

JICS

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Ultra fine thin films of pure and SnO doped ZnO nanosensor were grown on gold digitated ceramic substrate from bis(2, 4-pentanedionate)dimethylethanolamine zinc (II) using bis(2, 4-pentanedionate) tin(II) chloride as a dopant by ultrasonic aerosol assisted chemical vapor deposition technique (UAACVD) at temperature range of 400-450 °C under oxygen atmosphere at 5 Pa pressure. The sensitivity, selectivity, fast recovery, and reliability test performed on nanosensor suggested that both doped and undoped ZnO thin films are suitable for detecting ethanol vapor in the temperature range of at 60 to 150 °C, whereas at room temperature (25 °C ) response and recovery time of the sensor increases many folds compared to 60 °C. Sensitivity of the ZnO sensor shows linear relationship with the increase of gas concentration. Electrical properties show that 1 % SnO doped ZnO enhanced the sensitivity of the film drastically and thus improved its detecting efficiency. Physico-chemical techniques like, CHNS-O, atomic absorption analyzer, and infra red and multinuclear nuclear magnetic resonance spectrometers were used for precursor characterization. X-ray diffractometer, scanning electron microscope, sigma scan analyzer and energy dispersive x-ray techniques were used for thin film characterization.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High efficiency ZnO nano sensor, fabrication and characterization

Hussain

Mazhara

Hussainb

et al. 2010

JICS

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“…In fact, in chemical field ZnO is well known as a photocatalyst [1] with high chemical activity, e.g. It is also a singular element with outstanding physical characteristics, being a unique material exhibiting semiconducting and piezoelectric dual properties [2,3].…”

Section: Introductionmentioning

confidence: 99%

Growth of ZnO nanostructures on Si by means of plasma immersion ion implantation and deposition

Oliveira

Vieira

Ueda

et al. 2013

Vacuum

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Crystalline zinc oxide (ZnO) nanostructures have been grown on Si substrates by means of Plasma Based Ion Implantation and Deposition (PIII&D) at temperature of about 300 0 C and in the presence of an argon glow discharge. In the process a crucible filled with small pieces of metallic zinc plays the role of the anode of the discharge itself, being polarized by positive DC voltage of about 400V. Electrons produced by thermionic emission by an oxide cathode (Ba, Sr, Ca)O impact this crucible, causing its heating and vaporization of Zn. Partial ionization of Zn atoms takes place due to collisions with plasma particles. High negative voltage pulses (7 kv/40μs/250Hz) applied to the sample holder cause the implantation of metallic zinc into Si surface, while Zn deposition happens between pulses. After annealing at 700 0 C, strong UV and various visible photoluminescence bands are observed at room temperature, as well as the presence of ZnO nanoparticles. The coated surface was characterized in detail using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. XRD indicated the presence of only ZnO peaks after annealing. The composition analysis by EDS revealed distinct Zn/O stoichiometry relation depending on the conditions of the process. AFM images showed the formation of columns in the nanoscale range. Topography viewed by SEM showed the formation of structures similar to cactus with nanothorns. Depth analysis performed by XPS indicated an increase of concentration of metallic Zn with increasing depth and the exclusive presence of ZnO for outer regions. PIII&D allowed to growing nanostructures of ZnO on Si without the need of a buffer layer.

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“…Cu 2 O can play a significant role in solar energy conversion, electronics, magnetic storage, catalysis, and gas sensor applications [3][4][5][6][7]. Many techniques such as radiation methods [8], spray and micro emulsion techniques [9], thermal reduction [10], laser ablation [11], metal vapor synthesis [12], vacuum vapor deposition [13], chemical reduction [14], electrodeposition [15] and ion implantation [16] have been developed to synthesize copper nanoparticles, inter alia in this study sputtering synthetic method [17] has been used to prepare Cu nanoparticles. Although sputtering techniques are commonly used to deposit metal thin film on insulating and conducting substrates, we report its reliable application as a facile physical route to synthesis Cu nanoparticles.…”

Section: Introductionmentioning

confidence: 99%