Nanostructured metal–insulator–metal capacitor with anodic titania

Kannadassan, D.; Karthik, R.; Baghini, Maryam Shojaei; Mallick, P. S.

doi:10.1016/j.mssp.2012.10.013

Cited by 7 publications

(4 citation statements)

References 24 publications

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“…This indicates that frequencies higher than 100 Hz result in notable dispersion, which is supported by the report [10]. This phenomenon reflects a middle and high frequency dispersion feature of the dielectric and indicates the formation of stronger dipolar polarization [23]. Further, the dependence of capacitance density per unit planar area with an applied frequency can be expressed by the following equation [3]:

C = C_{m} (1 + \frac{A}{1 + {(f / f_{c})}^{2 n}})

where the bracket item at the right of the equation represents the non-linearity factor, f c is the cutoff frequency and equals 1/2 πτ ( τ denotes the relaxation time constant of the dielectric), C m represents the bulk-related capacitance ( f >> f c ), n is a value in the range of 0 to 1, and A is an amplitude factor.…”

Section: Resultssupporting

confidence: 71%

High-Performance MIM Capacitors for a Secondary Power Supply Application

Chou

et al. 2018

Micromachines

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Microstructure is important to the development of energy devices with high performance. In this work, a three-dimensional Si-based metal-insulator-metal (MIM) capacitor has been reported, which is fabricated by microelectromechanical systems (MEMS) technology. Area enlargement is achieved by forming deep trenches in a silicon substrate using the deep reactive ion etching method. The results indicate that an area of 2.45 × 103 mm2 can be realized in the deep trench structure with a high aspect ratio of 30:1. Subsequently, a dielectric Al2O3 layer and electrode W/TiN layers are deposited by atomic layer deposition. The obtained capacitor has superior performance, such as a high breakdown voltage (34.1 V), a moderate energy density (≥1.23 mJ/cm2) per unit planar area, a high breakdown electric field (6.1 ± 0.1 MV/cm), a low leakage current (10−7 A/cm2 at 22.5 V), and a low quadratic voltage coefficient of capacitance (VCC) (≤63.1 ppm/V2). In addition, the device’s performance has been theoretically examined. The results show that the high energy supply and small leakage current can be attributed to the Poole–Frenkel emission in the high-field region and the trap-assisted tunneling in the low-field region. The reported capacitor has potential application as a secondary power supply.

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C = C_{m} (1 + \frac{A}{1 + {(f / f_{c})}^{2 n}})

Section: Resultssupporting

confidence: 71%

High-Performance MIM Capacitors for a Secondary Power Supply Application

Chou

et al. 2018

Micromachines

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“…At low anodization voltages (15 V and 20 V), Al bottom electrode is also slightly anodized which was reported in Ref. . This is due to outward migration of Al ion which forms a thin interface layer of AlTiO.…”

Section: Fabrication and Characterizationsupporting

confidence: 63%

“…At higher anodization voltages, the crystalline γ‐Al 2 O 3 emerges at 2θ = 65.5°. Crystallization of anodic TiO 2 has been addressed by many authors and summarized in our earlier work . Readers are recommended to read the nucleation/crystallization of anodic bilayer oxides reported in Refs.…”

Section: Fabrication and Characterizationmentioning

confidence: 99%

Modeling of field dependent Maxwell‐Wagner interfacial capacitance for bilayer metal‐insulator‐metal capacitors

Kannadassan

Mallick

2017

Micro & Optical Tech Letters

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In this letter, we have presented the modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer metal-insulator-metal (MIM) capacitors. The model was verified with measured capacitance-voltage characteristics of fabricated bilayer Al 2 O 3 /TiO 2 MIM capacitors. The model reveals the origin of voltage linearity of MIM capacitors at low frequencies (<10 kHz). The proposed model for bilayer/multilayer MIM capacitors is very useful tool to design circuits for mixed signal, analog and digital circuits with low variation of capacitance for change in voltage. K E Y W O R D Sanodization, frequency dependant capacitance, high-k, MIM capacitor, voltage linearity AbstractIn this letter, a compact dual-band bandpass filter (BPF) is designed, analyzed, and fabricated. A loop resonator 2970 | KHANI ET AL.

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“…Bulk anodic titania has been investigated for more than 50 years. Several properties such as growth factors, [3][4][5][6][7][8] crystallinity, 1,[9][10][11][12] conductivity, influence of anodization solution and regime 13 were widely studied by different authors. Despite all these studies deposition over anodic titania is still hardly understood.…”

mentioning

confidence: 99%

Effect of the Anodic Titania Layer Thickness on Electrodeposition of Zinc on Ti/TiO₂from Deep Eutectic Solvent

Starykevich¹,

Salak²,

Ivanou³

et al. 2017

J. Electrochem. Soc.

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Zinc electrodeposition from a deep eutectic mixture of ZnCl2 and choline chloride/ethylene glycol on titanium covered by an anodic titania film of different thicknesses was studied. It was shown that thin titanium dioxide layers work as high resistive media and the rate of zinc deposition decreases with film thickness. Thicker titania layers (23 nm and higher) have opposite properties and the zinc reduction rate starts gradually increasing with thickness. This happens because at the higher voltage necessary to grow thicker anodic films they become more crystalline and consequently more conductive. There is also evidence that in deep eutectic solvent no dense organic layer forms on the titanium/titania electrodes. The application of an AC signal superimposed on a DC potential only marginally increases the amount of zinc deposited and FTIR measurements did not reveal the formation of any chemical bonds between the film and deep eutectic solvent. Zn deposition onto titanium/titania at −1.6 V is characterized by instantaneous three-dimensional nucleation mechanism, which is independent of the titania thickness.

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Nanostructured metal–insulator–metal capacitor with anodic titania

Cited by 7 publications

References 24 publications

High-Performance MIM Capacitors for a Secondary Power Supply Application

High-Performance MIM Capacitors for a Secondary Power Supply Application

Modeling of field dependent Maxwell‐Wagner interfacial capacitance for bilayer metal‐insulator‐metal capacitors

Effect of the Anodic Titania Layer Thickness on Electrodeposition of Zinc on Ti/TiO₂from Deep Eutectic Solvent

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Nanostructured metal–insulator–metal capacitor with anodic titania

Cited by 7 publications

References 24 publications

High-Performance MIM Capacitors for a Secondary Power Supply Application

High-Performance MIM Capacitors for a Secondary Power Supply Application

Modeling of field dependent Maxwell‐Wagner interfacial capacitance for bilayer metal‐insulator‐metal capacitors

Effect of the Anodic Titania Layer Thickness on Electrodeposition of Zinc on Ti/TiO2from Deep Eutectic Solvent

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Product

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Effect of the Anodic Titania Layer Thickness on Electrodeposition of Zinc on Ti/TiO₂from Deep Eutectic Solvent