Nanowire Field-Effect Transistor

Wernersson, Lars‐Erik; Lind, Erik; Samuelson, Lars; Löwgren, Truls; Ohlsson, Björn

doi:10.1143/jjap.46.2629

Cited by 21 publications

(7 citation statements)

References 8 publications

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“…InAs nanowires have been grown by Chemical Beam Epitaxy and by Metal Organic Vapor Phase Epitaxy using conventional source materials in an Au-particle assisted growth mode. Well-defined arrays (one to one hundred) of nanowires with diameters down below 20 nm have been demonstrated and these arrays are used for processing of vertical wrap-gate transistors in a simple process scheme using standard deposition and etching processes [4]. Metal gates of either Au or Cr have been deposited via direct evaporation and high-κ dielectric (HfO 2 ) has been used to isolate the gate.…”

Section: Methodsmentioning

confidence: 99%

III/V Nanowire FETs for CMOS?

Wernersson

2008

ECS Trans.

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III/V MOS transistors are currently attracting considerable attention. The main driving force is that the advantageous transport properties in III/V materials are expected to increase the drive current in the MOS transistors. Major challenges for the III/V MOS technologies include the growth of high-quality III/V materials on Si substrates and the control of the MOS interface. Using the nanowire technology, we have recently demonstrated enhancement mode operation of 50 nm L g InAs nanowire wrap-gate transistors in a vertical configuration. They demonstrate a transconductance of 0.5 S/mm, an inverse sub-threshold slope of about 80 mV/dec., and an I on /I off ratio > 1000 for a drive voltage of V d =0.5 V. These results show promise for the use of nanowires in CMOS applications.

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Section: Methodsmentioning

confidence: 99%

III/V Nanowire FETs for CMOS?

Wernersson

2008

ECS Trans.

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“…The energy bandgap (E g ) of the 2D layers can be estimated by using the relation of the direct optical transition: 41 E g (eV ) ≈ 1240 λ e (nm) [ 2 ] Where λ e is the transmission onset. Using equation 2 a bandgap of 3.65 eV was calculated for the ZnO thin films deposited at temperatures ≥ 50 • C. We did not observe any transmission change with the increase of the layer thickness (for example when the passed charge densities were 0.6 or 0.8 C cm −2 ).…”

Section: Zno 2d Layer Compositionmentioning

confidence: 99%

“…Zinc oxide is a transparent n-type semiconductor with very interesting optical and electrical properties such as a direct bandgap around 3.3 eV, a large exciton binding energy (60 meV), a good electron conductivity, piezoelectricity and biocompatibility. It has found numerous applications such as piezoelectric transducers, [1][2][3] field effect transistors, [2][3][4] gas sensors, 5 light-emitting diodes, 6 optical waveguide, 7 in solar cells 8,[14][15][16][17][18][19][20][21][22][23][24][25][26] etc.…”

mentioning

confidence: 99%

Electrochemical Deposition of ZnO Thin Films and Nanowires for Photovoltaic Applications

Sanchez

Lévy‐Clément

Ivanova

2012

J. Electrochem. Soc.

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The electrochemical deposition of ZnO thin films (2D layers) and nanowires on glass substrates covered with transparent conductive oxide (TCO) was studied with the purpose to use them in nanostructured solar cells. It was shown that the bath temperature and the electrolyte concentration played an important role on the ZnO layer morphology, composition, crystallization and optical properties. It was found that the thin films deposited from electrolytes with lower potassium chloride (KCl) concentration (0.1 M) and at temperatures higher than 50 • C exhibit very good optical and structural properties. The rapid thermal annealing step at 500 • C improves the ZnO film properties whereas the conventional annealing did not bring a real improvement. These 2D layers could be used subsequently for the electrodeposition of ZnO nanowires which dimensions could be tailored by the seed layer (2D layer) morphology and thickness. The supporting electrolyte (KCl) concentration and the passed charge density during the electrodeposition process could be additionally used to control their dimensions. Thus grown ZnO nanowires exhibit interesting optical and structural properties and therefore could be further integrated in nanostructured extremely thin absorber (eta) and hybrid (dye sensitized or polymer) solar cells.

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“…A great number of novel applications in optics, optoelectronics, catalysis, sensing, and energy conversion has been demonstrated. [1][2][3][4][5][6] Uniform and free standing assembly of nanostructures like nanowires or -tubes, especially vertical aligned arrays of semiconductive nanostructures with a high length/diameter aspect ratio are promising materials for photovoltaic or light emitting applications, due to their well defined channels working as carriers. [7,8] Many different methods of synthesis for nanowires and nanotubes are well known, for example: sol-gel procedure or electrophoretic deposition.…”

Section: By Mario Boehme * and Wolfgang Ensingermentioning

confidence: 99%

From Nanowheat to Nanograss: A Preparation Method to Achieve Free Standing Nanostructures Having a High Length/Diameter Aspect Ratio

Boehme

Ensinger

2011

Adv Eng Mater

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The controlled fabrication of free standing, none collapsing nanostructures with a high length/diameter aspect ratio is reported. Usually these nanostructures synthesized using a template‐based method tends to collapse into wheat like structures using common techniques to separate the nanostructures from the template. Based on a novel process to inhibit the mechanism of collapsing nanostructures synthesized by template‐based deposition, nanograss‐like, and free standing nanostructures are obtained.

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Nanowire Field-Effect Transistor

Cited by 21 publications

References 8 publications

III/V Nanowire FETs for CMOS?

III/V Nanowire FETs for CMOS?

Electrochemical Deposition of ZnO Thin Films and Nanowires for Photovoltaic Applications

From Nanowheat to Nanograss: A Preparation Method to Achieve Free Standing Nanostructures Having a High Length/Diameter Aspect Ratio

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