Nanowire LEDs grown directly on flexible metal foil

Abstract

Using molecular beam epitaxy, self-assembled AlGaN nanowires are grown directly on Ta and Ti foils. Scanning electron microscopy shows that the nanowires are locally textured with the underlying metallic grains. Photoluminescence spectra of GaN nanowires grown on metal foils are comparable to GaN nanowires grown on single crystal Si wafers. Similarly, photoluminescence lifetimes do not vary significantly between these samples. Operational AlGaN light emitting diodes are grown directly on flexible Ta foil with an electroluminescence peak emission of ∼350 nm and a turn-on voltage of ∼5 V. These results pave the way for roll-to-roll manufacturing of solid state optoelectronics.

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

“…4(d). 28,42,[72][73][74][75] The device also shows good diode characteristics with a negligible leakage current, as depicted in the inset of Fig. 5(a).…”

Colour optimization of phosphor-converted flexible nitride nanowire white light emitting diodes

“…However, this technique suffers from the high cost related to the layer lift-off and micro-structuring. An alternative method is to use bottom-up three-dimensional nanowires (NWs) [14][15][16][17][18][19].…”

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

“…Moreover, their optical qualities seem to be not compromised, e.g., InN and GaN nanowires grown on silicon oxide show similar photoluminescence characteristics compared to the nanowires grown on Si [99]. Recently, visible and UV LEDs with InGaN and AlGaN quantum wells/quantum disks have been demonstrated on metal substrates [102][103][104][105][106]. III-nitride nanowire structures on graphene have also been investigated.…”