2019
DOI: 10.1021/acs.nanolett.9b00165
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Nanowire Length, Density, and Crystalline Quality Retrieved from a Single Optical Spectrum

Abstract: We propose spectral domain attenuated reflectometry (SDAR) for fast characterization of nanomaterial growth. The method is demonstrated here for zinc oxide (ZnO) nanowires (NWs) which are grown vertically in random forest fashion showing that it is not limited to well-ordered NWs. We show how SDAR can provide, on the basis of a single measured spectrum, simultaneous information on nanowire length, nanowire density (through nanowire/air filling ratio), and crystalline quality (through band gap). The robustness … Show more

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Cited by 11 publications
(12 citation statements)
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References 42 publications
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“…A hydrothermal in situ method is proposed to synthesize ZnO-NWs on seeded silicon (Si) substrate within a microfluidic chip in dynamic mode instead of the static mode previously reported in the literature 13 , 24 , 25 , 45 . This method has all the advantages of a microfluidic environment.…”
Section: Resultssupporting
confidence: 80%
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“…A hydrothermal in situ method is proposed to synthesize ZnO-NWs on seeded silicon (Si) substrate within a microfluidic chip in dynamic mode instead of the static mode previously reported in the literature 13 , 24 , 25 , 45 . This method has all the advantages of a microfluidic environment.…”
Section: Resultssupporting
confidence: 80%
“…The ZnO-NWs were grown vertically in a random forest fashion with a maximum tilting angle of 10° with respect to the direction normal to the surface, as shown in the acquired SEM images. This growth is similar to those of the NWs grown at the macroscale, where preferential growth occurs along the c axis of the ZnO Wurtzite lattice, as already confirmed by X-ray diffraction (XRD) patterns, in which the largest XRD peak corresponds to the [002] crystallographic plane of ZnO 45 . Uniform growth of NWs was achieved over a 10-mm-wide microreactor, as shown in the figure inset, which is 20× larger than the previously reported in situ growth in microchannels, which was limited to widths below 500 µm 38 40 .…”
Section: Resultsmentioning
confidence: 63%
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“…Considering the substrate mechanical resistance, the classical cleavage method for monocrystalline substrates (such as Si) is not suitable here, and thus, no SEM cross-section view is available here. However, thanks to a model developed by Erfan et al 20 , the nanowire length on the tiling substrates was estimated by UV–visible measurement and is ~1.794–1.930 μm, depending on the model fitting used. This kind of surface is quite close to the ideal Si–wafer surface, i.e., a smooth and non-porous surface, which explains the almost identical morphology that was observed by SEM 13,17,20,21 .…”
Section: Resultsmentioning
confidence: 99%
“…However, thanks to a model developed by Erfan et al 20 , the nanowire length on the tiling substrates was estimated by UV–visible measurement and is ~1.794–1.930 μm, depending on the model fitting used. This kind of surface is quite close to the ideal Si–wafer surface, i.e., a smooth and non-porous surface, which explains the almost identical morphology that was observed by SEM 13,17,20,21 . The good homogeneity of the ZnO NWs was also confirmed by the UV–vis measurements, which showed good signal reproducibility all over the substrate.…”
Section: Resultsmentioning
confidence: 99%