Nature of grain boundaries in laser crystallized polycrystalline silicon thin films

Christiansen, Silke; Lengsfeld, Philipp; Krinke, J.; Nerding, M.; Nickel, N. H.; Strunk, H. P.

doi:10.1063/1.1360703

Cited by 43 publications

(20 citation statements)

References 28 publications

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“…The main grain boundaries [marked with black in Fig. 4 thermal stress in a crystallized film [19], [20]. The concept of enlarged crystalline grain formation is therefore approved.…”

Section: A Laser Treatment Of A-si Filmsmentioning

confidence: 99%

Low-Temperature Fabricated TFTs on Polysilicon Stripes

Brunets

Holleman

Kovalgin

et al. 2009

IEEE Trans. Electron Devices

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Abstract-This paper presents a novel approach to make highperformance CMOS at low temperatures. Fully functional devices are manufactured using back-end compatible substrate temperatures after the deposition of the amorphous-silicon starting material. The amorphous silicon is pretextured to control the location of grain boundaries. Green-laser annealing is employed for crystallization and dopant activation.

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“…The main grain boundaries [marked with black in Fig. 4 thermal stress in a crystallized film [19], [20]. The concept of enlarged crystalline grain formation is therefore approved.…”

Section: A Laser Treatment Of A-si Filmsmentioning

confidence: 99%

Low-Temperature Fabricated TFTs on Polysilicon Stripes

Brunets

Holleman

Kovalgin

et al. 2009

IEEE Trans. Electron Devices

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“…The peak located at −2.15 eV can be due to H on a Si (111) surface (E = −2.14 eV). However, since our polySi samples are not crystallized in the super lateral growth regime they do not exhibit a (111) surface texture [23,24]. Therefore, it is more likely that this peak is due to H at isolated silicon dangling-bonds (E = −2.17 eV).…”

Section: Hydrogen Bonding In Partially and Completely Crystallized Pomentioning

confidence: 90%

Laser crystallization of hydrogenated amorphous silicon

Nickel

Brendel

Saleh

2004

phys. stat. sol. (c)

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Doped and undoped hydrogenated amorphous silicon films were crystallized employing a step-by-step laser crystallization method. The influence of laser crystallization on structural properties and hydrogen bonding in polycrystalline silicon was investigated using Raman backscattering spectrometry, electron paramagnetic resonance, and hydrogen effusion measurements. At low laser fluences, E L , a two-layer system is created. With increasing E L the spin density of undoped poly-Si increase and saturates at a value of about 5.2×1018 cm -3 . With increasing boron and phosphorous concentration the LO-TO phonon line shifts to smaller wave numbers and broadens asymmetrically due to a resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. From H effusion spectra the hydrogen density-of-states distribution is derived. Laser crystallization results in an increase of the H bonding energy by about 0.3 eV. Interestingly, H bonding is also affected by the deposition temperature of the amorphous starting material. In completely crystallized poly-Si a residual H concentration of up to 17 at.% can be observed.

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“…The grain boundary populations in poly-Si were investigated experimentally. 5,6) The fraction of coincidence twist boundaries and random GB's was considerably less than that of twin boundaries. These experimental results suggest that coincidence twist boundaries is unstable.…”

Section: Migration Of Gb'smentioning

confidence: 99%

“…In contrast, random GB's are thought to deteriorate the electrical and mechanical properties of poly-Si, since dangling-bonds are possibly formed at these boundaries. Although the fraction of random GB's observed in poly-Si is less than that of twin boundaries, 5,6) random GB's strongly affect the properties of poly-Si. 7) Computational studies of coincidence twist boundaries in Si have been conducted, 8,9) since atmistic structure of these boundaries contain large bond distortions and features of these boundaries are similar to random GB's.…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Simulation of Grain Boundary Formation and Migration in Silicon

2006

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Molecular dynamics simulation using Tersoff potential was carried out to investigate the formation and the migration of (010) AE5 twist boundary in silicon. Effects of carbon atoms on the grain boundary formation and the grain boundary migration were also investigated. Amorphous thin layers remained at the twist boundary even after crystallization, and changes in the thickness of this layers caused grain boundary migration. When carbon atoms were segregated at the twist boundary, these atoms prevented shrinkage of an amorphous thin layer, and the grain boundary migration was retarded. Precipitated carbon atoms within the grain produces a strain field and this strain field possibly became driving force for the grain boundary migration.

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Nature of grain boundaries in laser crystallized polycrystalline silicon thin films

Cited by 43 publications

References 28 publications

Low-Temperature Fabricated TFTs on Polysilicon Stripes

Low-Temperature Fabricated TFTs on Polysilicon Stripes

Laser crystallization of hydrogenated amorphous silicon

Molecular Dynamics Simulation of Grain Boundary Formation and Migration in Silicon

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