Nature of luminescence and strain in gallium nitride nanowires

Mastro, Michael A.; Maximenko, S. I.; Gowda, M.; Simpkins, Blake S.; Pehrsson, Pehr E.; Long, James P.; Mäkinen, Antti; Freitas, Jaime A.; Hite, Jennifer K.; Eddy, Charles R.; Kim, J.

doi:10.1016/j.jcrysgro.2009.01.053

Cited by 8 publications

(12 citation statements)

References 22 publications

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“…An important caveat to these results is that further quantitative studies of the temperature dependence of the cw-PL signal is required in order to separate the contributions that may have arisen from yellow defect luminescence at 300 K, which is typically observed in PL or CL of GaN nanostructures. [40][41][42] In this work, nanopyramids grown without quantum wells did yield yellow luminescence with a peak wavelength of emission and an intensity that was weakly dependent on temperature ͑585 nm at 300 K and 588 nm at 4 K͒, as is typical for yellow defect luminescence in GaN. 37,38 Thus, for more accurate estimations of IQE by the PL ratio method, special care must be given to ensure that the contribution of yellow defect luminescence is not included in the integrated PL intensity at 300 K. Further clarification of IQE results can be achieved through the use of electroluminescent ͑EL͒ measurement techniques.…”

Section: B Nanopyramid Heterostructuresmentioning

confidence: 99%

III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy

Wildeson

Colby

Ewoldt

et al. 2010

Journal of Applied Physics

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Nanopyramid light emitting diodes ͑LEDs͒ have been synthesized by selective area organometallic vapor phase epitaxy. Self-organized porous anodic alumina is used to pattern the dielectric growth templates via reactive ion etching, eliminating the need for lithographic processes. ͑In,Ga͒N quantum well growth occurs primarily on the six ͕1101͖ semipolar facets of each of the nanopyramids, while coherent ͑In,Ga͒N quantum dots with heights of up to ϳ20 nm are incorporated at the apex by controlling growth conditions. Transmission electron microscopy ͑TEM͒ indicates that the ͑In,Ga͒N active regions of the nanopyramid heterostructures are completely dislocation-free. Temperature-dependent continuous-wave photoluminescence of nanopyramid heterostructures yields a peak emission wavelength of 617 nm and 605 nm at 300 K and 4 K, respectively. The peak emission energy varies with increasing temperature with a double S-shaped profile, which is attributed to either the presence of two types of InN-rich features within the nanopyramids or a contribution from the commonly observed yellow defect luminescence close to 300 K. TEM cross-sections reveal continuous planar defects in the ͑In,Ga͒N quantum wells and GaN cladding layers grown at 650-780°C, present in 38% of the nanopyramid heterostructures. Plan-view TEM of the planar defects confirms that these defects do not terminate within the nanopyramids. During the growth of p-GaN, the structure of the nanopyramid LEDs changed from pyramidal to a partially coalesced film as the thickness requirements for an undepleted p-GaN layer result in nanopyramid impingement. Continuous-wave electroluminescence of nanopyramid LEDs reveals a 45 nm redshift in comparison to a thin-film LED, suggesting higher InN incorporation in the nanopyramid LEDs. These results strongly encourage future investigations of III-nitride nanoheteroepitaxy as an approach for creating efficient long wavelength LEDs.

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Section: B Nanopyramid Heterostructuresmentioning

confidence: 99%

III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy

Wildeson

Colby

Ewoldt

et al. 2010

Journal of Applied Physics

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“…While the nanowires grow along the adirection, a small amount of deposition directly on the carbon paper presents a range of diffracting planes at the nominal surface. A 2θ-θ X-ray diffraction pattern in Figure 2 presents sharp diffraction from the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) planes as well as weaker diffraction from other planes. Additional experiments demonstrated that the InGaN peak varied with the composition of the InGaN as expected.…”

Section: Resultsmentioning

confidence: 99%

“…[7][8][9][10][11][12][13][14] The standard fabrication utilizes an expense laden process to build a multi-layer thin-film structure on rigid substrates such as sapphire. [15][16][17][18][19][20][21][22][23][24][25][26] A contrasting application would be a lowemittance device covering a non-planar architectural structure, e.g., a pillar, or flexible element. To make such as device economically and mechanically feasible would require a lowcost process on a flexible substrate.…”

Section: Introductionmentioning

confidence: 99%

III‐nitride nanowire based light emitting diodes on carbon paper

Mastro

Anderson

Tadjer

et al. 2014

Phys. Status Solidi C

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This article presents the use of flexible carbon substrates for the growth of III‐nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a‐plane direction, normal to the local surface of the carbon paper. Strong photo‐ and electro‐luminescence was observed from InGaN quantum well light emitting diode nanowires. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Yellow emission is observable in figure 3(a) from random crystallites that deposited directly on the sapphire surface. [15] Prior to the onset of growth (at elevated temperature), the nickel film manifests as a highdensity of semi-spheres in a response to minimize its surface tension. It is possible for some reactants to not react with the nickel, directly reach the sapphire surface, and crystallize via unstructured nucleation.…”

Section: Resultsmentioning

confidence: 99%

All‐epitaxial fabrication of a nanowire plasmon laser structure

Mastro¹,

Freitas²,

Hite³

et al. 2014

Phys. Status Solidi C

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An all‐epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an aluminum plasmonic metal/SiNx dielectric/InGaN quantum well shell surrounding a p‐GaN nanowire core. Strong UV luminescence was observed from as‐grown vertically‐aligned arrays as well as horizontally‐aligned nanowires transferred to a transparent carrier wafer. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Nature of luminescence and strain in gallium nitride nanowires

Cited by 8 publications

References 22 publications

III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy

III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy

III‐nitride nanowire based light emitting diodes on carbon paper

All‐epitaxial fabrication of a nanowire plasmon laser structure

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