Nb-doped Ga 2 O 3 as charge-trapping layer for nonvolatile memory applications

Shi, Runpu; Huang, Xiaodong; Sin, J.K.O.; Lai, P. T.

doi:10.1016/j.microrel.2016.07.148

Cited by 8 publications

(4 citation statements)

References 16 publications

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“…Considering the poor conductive properties of the pure β-Ga 2 O 3 thin film, many research groups begin to improve the properties of β-Ga 2 O 3 thin films by doping technology [10][11][12][13][14]. Recent studies indicate that the memory capacitor with lightly niobium (Nb)-doped Ga 2 O 3 shows better charge-trapping characteristics [15]. Moreover, Nb-doped Ga 2 O 3 has immensely applied prospects in high-performance memory applications.…”

mentioning

confidence: 99%

Effect of thickness on the structural and optical properties of the niobium‐doped β ‐Ga ₂ O ₃ films

Zhang

Deng

Kong

et al. 2019

Micro & Nano Letters

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To investigate the effect of thickness on the structural and optical properties of niobium-doped beta gallium oxide (β-Ga 2 O 3 :Nb) thin films, a series of β-Ga 2 O 3 :Nb thin films with different thicknesses were prepared by radio-frequency magnetron method. The crystalline quality is highly improved when the film thickness exceeds 145 nm. The surface exhibits different morphologies under different film thicknesses. The average transmittance of all the films are over 80% in visible range, and that the ultraviolet absorption edge shifts to longer wavelength indicates the bandgap shrinks with increasing the film thickness. Moreover, the photoluminescence spectrum measurements indicate that fewer defects were formed when the film thickness is around 145 nm.

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confidence: 99%

Effect of thickness on the structural and optical properties of the niobium‐doped β ‐Ga ₂ O ₃ films

Zhang

Deng

Kong

et al. 2019

Micro & Nano Letters

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“…Shi et al and Zhang et al studied the effects of Nb doping on the properties of β-Ga 2 O 3 films by magnetron sputtering. 246,247 Furthermore, Shi et al focused on the charge-trapping properties of Nb doped β-Ga 2 O 3 by obtaining the metal-oxide–nitride-oxide–silicon (MONOS) structure capacitor; they found that it had better charge-trapping properties with light doping concentrations. 247 However, the performance of the capacitor was deteriorative in heavy doping Nb concentrations.…”

Section: Effects Of Defects and Impurities On Electronic Propertiesmentioning

confidence: 99%

“…246,247 Furthermore, Shi et al focused on the charge-trapping properties of Nb doped β-Ga 2 O 3 by obtaining the metal-oxide–nitride-oxide–silicon (MONOS) structure capacitor; they found that it had better charge-trapping properties with light doping concentrations. 247 However, the performance of the capacitor was deteriorative in heavy doping Nb concentrations. This was mainly related to the Nb out-diffusion degree and interface traps.…”

Section: Effects Of Defects and Impurities On Electronic Propertiesmentioning

confidence: 99%

Recent progress on the effects of impurities and defects on the properties of Ga₂O₃

Wang

Lin

et al. 2022

J. Mater. Chem. C

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“…Doping is usually used to control the optical and electrical properties of Ga 2 O 3 materials, and a large number of researches on doping have been reported. Recent studies indicate that the memory capacitor with lightly Nb-doped Ga 2 O 3 shows better charge-trapping characteristics [18]. Nb-doped Ga 2 O 3 has immensely applied prospects in high-performance memory applications.…”

mentioning

confidence: 99%

Effect of annealing atmosphere on the structural and optical properties of the Nb‐doped β‐Ga ₂ O ₃ films

Zhang

Deng

Kong

et al. 2019

Micro & Nano Letters

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The Nb-doped β-Ga 2 O 3 (β-Ga 2 O 3 :Nb) thin films have been deposited on the Si and quartz substrates by radio-frequency magnetron technique in argon ambient. The effects of annealing atmosphere on the structural and optical properties of β-Ga 2 O 3 :Nb thin films have been investigated. The crystallinity of β-Ga 2 O 3 :Nb film is improved obviously after annealing. An increase in surface roughness is observed on annealed films. The bandgap from 5.19 to 5.26 eV is obtained after annealing in different atmosphere, which is larger than the 5.09 eV before annealing. Moreover, the red-shift of photoluminescence emission peak is observed after annealing, and the annealing atmosphere has an influence on the peak intensity.

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Nb-doped Ga 2 O 3 as charge-trapping layer for nonvolatile memory applications

Cited by 8 publications

References 16 publications

Effect of thickness on the structural and optical properties of the niobium‐doped β ‐Ga ₂ O ₃ films

Effect of thickness on the structural and optical properties of the niobium‐doped β ‐Ga ₂ O ₃ films

Recent progress on the effects of impurities and defects on the properties of Ga₂O₃

Effect of annealing atmosphere on the structural and optical properties of the Nb‐doped β‐Ga ₂ O ₃ films

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Nb-doped Ga 2 O 3 as charge-trapping layer for nonvolatile memory applications

Cited by 8 publications

References 16 publications

Effect of thickness on the structural and optical properties of the niobium‐doped β ‐Ga 2 O 3 films

Effect of thickness on the structural and optical properties of the niobium‐doped β ‐Ga 2 O 3 films

Recent progress on the effects of impurities and defects on the properties of Ga2O3

Effect of annealing atmosphere on the structural and optical properties of the Nb‐doped β‐Ga 2 O 3 films

Contact Info

Product

Resources

About

Effect of thickness on the structural and optical properties of the niobium‐doped β ‐Ga ₂ O ₃ films

Effect of thickness on the structural and optical properties of the niobium‐doped β ‐Ga ₂ O ₃ films

Recent progress on the effects of impurities and defects on the properties of Ga₂O₃

Effect of annealing atmosphere on the structural and optical properties of the Nb‐doped β‐Ga ₂ O ₃ films