Near-diffraction-limit 1-kHz sub-nanosecond diode-end-pumped Nd:YAG laser amplifier via self-compensating spherical aberration

Pulse-jitter reduction in passively Q-switched Nd:YAG/Cr:YAG microchip lasers by injection seeding actively Q-switched laser pulses

“…The integrable passively Q-switched Nd:YAG/Cr:YAG microchip laser is effective to achieve high-repetition-rate, narrow-pulse-width (sub-ns), and high-peak-power pulse sequence [1,2]. As it does not require complex extra modulation devices, it can be applied to various complex settings, including high-precision laser ranging, laser medical treatment, and lidar [3][4][5][6]. However, compared with the actively Q-switched laser, the passively Q-switched microchip laser has several drawbacks: 1) a limited hold-off of 6-8 dB for the passively Q-switched microchip laser, which limits the gain and energy extraction [7], 2) a residual non-saturable absorption in the Cr:YAG saturable absorber that leads to a decrease in laser efficiency, and 3) a relatively large pulse timing jitter, particularly when the initial transmittance of the Cr:YAG saturated absorber is low.…”