Near infrared photo-detector using self-assembled formation of organic crystalline nanopillar arrays

Ajiki, Yoshiharu; Kan, Tetsuo; Yahiro, Masayuki; Hamada, Akiko; Adachi, Junji; Adachi, Chihaya; Matsumoto, Kiyoshi; Shimoyama, Isao

doi:10.1109/memsys.2014.6765595

Cited by 3 publications

(1 citation statement)

References 5 publications

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“…Among the various nanopillar arrays, silicon nanopillars have been widely investigated because silicon is an important material in optical and optoelectronic devices, moreover, they can be fabricated with existing silicon processing methods and with low cost. 12 There are many techniques to fabricate nanopillar arrays, such as photolithography with etching, 13 nanoimprinting lithography (NIL), 14,15 anodic aluminum oxide (AAO) patterning, 16,17 self-assembled particles, 18 laser direct writing 8 and so on. These methods have fabricated the nanopillar arrays with high aspect ratio, large area, or low fabrication cost.…”

Section: Introductionmentioning

confidence: 99%

A novel fabrication technique for high-aspect-ratio nanopillar arrays for SERS application

Duan

Ang

et al. 2020

RSC Adv.

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Section: Introductionmentioning

confidence: 99%

A novel fabrication technique for high-aspect-ratio nanopillar arrays for SERS application

Duan

Ang

et al. 2020

RSC Adv.

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Silicon based near infrared photodetector using self-assembled organic crystalline nano-pillars

Ajiki¹,

Kan

Yahiro

et al. 2016

Applied Physics Letters

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We propose a silicon (Si) based near-infrared photodetector using self-assembled organic crystalline nano-pillars, which were formed on an n-type Si substrate and were covered with an Au thin-film. These structures act as antennas for near-infrared light, resulting in an enhancement of the light absorption on the Au film. Because the Schottky junction is formed between the Au/n-type Si, the electron excited by the absorbed light can be detected as photocurrent. The optical measurement revealed that the nano-pillar structures enhanced the responsivity for the near-infrared light by 89 (14.5 mA/W) and 16 (0.433 mA/W) times compared with those of the photodetector without nano-pillars at the wavelengths of 1.2 and 1.3 μm, respectively. Moreover, no polarization dependency of the responsivity was observed, and the acceptable incident angle ranged from 0° to 30°. These broad responses were likely to be due to the organic nano-pillar structures' having variation in their orientation, which is advantageous for near-infrared detector uses.

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Si process compatible near-infrared photodetector using AU/SI nano-pillar array

Kan

Ajiki

Matsumoto

et al. 2016

2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS)

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Near infrared photo-detector using self-assembled formation of organic crystalline nanopillar arrays

Cited by 3 publications

References 5 publications

A novel fabrication technique for high-aspect-ratio nanopillar arrays for SERS application

A novel fabrication technique for high-aspect-ratio nanopillar arrays for SERS application

Silicon based near infrared photodetector using self-assembled organic crystalline nano-pillars

Si process compatible near-infrared photodetector using AU/SI nano-pillar array

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