Nearfield-immunity scan on printed circuit board level

IEEE Trans. Electromagn. Compat.

Nolhier

Caignet

et al. 2022

The work presented in this two-part paper focuses on a prediction method of the radiated susceptibility of integrated circuit and printed circuit board from near-field scan injection, in order to anticipate risks of non-compliance due to design weakness. In Part I, a worst-case estimator of the far-field induced voltage on a PCB trace was proposed. Based on it, an estimator of the radiated susceptibility of a printed-circuit board based on near-field scan results is derived and validated through two validation case studies.

Section: B Practical Implementation Of the Estimation Methodsmentioning

confidence: 99%

On the Correlation Between Near-Field Scan Immunity and Radiated Immunity at Printed Circuit Board Level – Part II

IEEE Trans. Electromagn. Compat.

Nolhier

Caignet

et al. 2022

“…Thus, the spatial profile of the receiving characteristic of the DUT provides a direct information about the coupling area and the sensitivity of the DUT to the incoming field. As the nearfield scan is performed on a finite number of points over the scan surface, a discrete convolution related S, F and R as shown in (2). The scan step must be smaller than the wavelength of the incoming disturbance to ensure that the DUT response to a local disturbance is characterized accurately.…”

Section: A Receiving Characteristicmentioning

confidence: 99%

A Rigorous Method to extrapolate Radiated Susceptibility from Near-Field Scan Immunity

2019 International Symposium on Electromagnetic Compatibility - EMC EUROPE

2019

Near-field injection or near-field scan immunity is a promising method for the analysis of the susceptibility of electronic boards and circuits. The resulting immunity map provides a precise localization of the sensitive area to electromagnetic disturbances to a given near-field source. However, the extrapolation of the immunity to another radiating source, either in near or far-field, is not trivial. This paper aims at proposing a rigorous post-processing method of near-field scan immunity results to extrapolate radiated immunity in other disturbance conditions, e.g. far-field illumination. The method is described and validated through simulation case studies.

“…The coupling of the field may induce enough large voltage fluctuations across the device to trigger failures. In [1] or [2], near-field injection is used to produce susceptibility mapping over PCB and identify sensitive devices or disturbance coupling paths. In [3], the method is extended to characterize susceptibility of ICs by local coupling on IC package up to 6 GHz.…”

Section: Introductionmentioning

confidence: 99%

Modeling Magnetic Near-Field Injection at Silicon Die Level

IEEE Trans. Electromagn. Compat.

Vrignon²,

Cavarroc

2016

International audienceNear-field injection at silicon die level is a promising application for various area such as the analyses of integrated circuit (IC) susceptibility to electromagnetic interferences and security for cryptographic applications. This paper presents a first attempt to simulate the voltage induced on integrated circuit interconnects by a magnetic field probe. The validation of the simulation results is based on near-field injection performed on a test chip containing various types of interconnects and on-chip voltage sensors