2015
DOI: 10.1103/physrevb.91.075303
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Nearly-free electronlike surface resonance of aβSi3N4(0001)/Si(111)8×8<

Abstract: We report the discovery of a nearly-free electronlike resonant state for a β-Si 3 N 4 (0001)-8 × 8 layer grown on Si(111), as observed by angle-resolved photoemission and scanning tunneling spectroscopy. Comparison with measurements performed on a Si(111)-7 × 7 surface helped us in the identification of the band. It is found that this parabolic state is degenerate with surface projected bulk bands of the Si(111) substrate.

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Cited by 12 publications
(10 citation statements)
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“…Peaks in the density of states for bias voltages of −0.3, −0.8, −1.5, and −2.3 V, as well as peaks for empty states +0.3 V and +0.8 V, are observed. Similar peaks were observed by many groups [21,24,[32][33][34][35][36][37], and they are usually denoted as S 1 = −0.3 eV, S 2 = −0.8 eV, and S 3 = −1.4 eV; we also observed a state at −2.3 eV, which was detected by the XPS method [38]. Some authors associate certain peaks in the density of state spectrum with specific atoms on the surface (7 × 7), for example, peaks at −0.3 and + 0.3 V are associated with adatoms [21,32], and the peak at −0.8 V is associated with rest atoms [32,37], that is, they are considered in the framework of the approximation of the local density of electronic states of a given atom.…”
Section: Sts Of the Si (111)-(7 × 7) And Impact Of Nh 3 Adsorptionsupporting
confidence: 88%
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“…Peaks in the density of states for bias voltages of −0.3, −0.8, −1.5, and −2.3 V, as well as peaks for empty states +0.3 V and +0.8 V, are observed. Similar peaks were observed by many groups [21,24,[32][33][34][35][36][37], and they are usually denoted as S 1 = −0.3 eV, S 2 = −0.8 eV, and S 3 = −1.4 eV; we also observed a state at −2.3 eV, which was detected by the XPS method [38]. Some authors associate certain peaks in the density of state spectrum with specific atoms on the surface (7 × 7), for example, peaks at −0.3 and + 0.3 V are associated with adatoms [21,32], and the peak at −0.8 V is associated with rest atoms [32,37], that is, they are considered in the framework of the approximation of the local density of electronic states of a given atom.…”
Section: Sts Of the Si (111)-(7 × 7) And Impact Of Nh 3 Adsorptionsupporting
confidence: 88%
“…There are vacancies in the adsorption phase. This confirms the high mobility of atoms in the adsorption phase, which was noted in the work [24]. At present, it is difficult to unequivocally indicate the nature of the protrusions, perhaps they consist of one, two, or several silicon atoms [40,41].…”
Section: Stm/sts Of the Structure (8 × 8)supporting
confidence: 81%
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