Neat Temporal Performance of InGaAs/InAlAs Single Photon Avalanche Diode With Stepwise Electric Field in Multiplication Layers

Abstract

We have incorporated a novel design of stepwise electric field in the multiplication layers to the InGaAs/InAlAs single photon avalanche diodes (SPADs). The stepwise electric field profile aims to circumvent the dilemma between dark count rate, afterpulsing and temporal performance. SPADs with large (240 µm) and small (25 µm) active area are fabricated and characterized. The intrinsic temporal response for large and small SPADs has a full-width at half maximum of 72 and 67 ps respectively. Importantly, the diffusion tail exhibits only about 200 ps full-width at one-thousandth maximum, showing fast and neat temporal characteristics. Such devices also present reasonable dark count rate of 5 × 10 6 Hz and 3 × 10 7 Hz and moderate single photon detection efficiency of 32 % and 27 % at about 200 K respectively for large and small devices, manifesting that the avalanche build-up time can be improved without losing the detection performance using our specific design and optimized electric field distribution. Such improvement in temporal performance of SPADs should facilitate their capability in the applications of time-correlated single photon counting and light detection and ranging.INDEX TERMS Single photon avalanche diode (SPAD), timing jitter, light detection and ranging.

In0.52Al0.48As Based Single Photon Avalanche Diodes With Stepped E-Field in Multiplication Layers and High Efficiency Beyond 60%

“…Therefore, for future advanced structure design, the tunneling generation remains the most concerning issue. The temporal response of our SPAD perfectly follows a Gaussian distribution function and is almost free from the slow diffusion tail [20]. The full-width of half-maximum of Gaussian function, known as the timing jitter, is recorded as a function of excess bias at different operation conditions respectively for the temperature of 200 K and 300 K. Fig.…”

“…Based on our previous work, this design has been proven to provide an excellent timing performance with considerable improvement in the DCR as compared with other reported In0.52Al0.48As SPADs [20]. We continue to put effort on the optimization of SPAD performance from the aspect of fabrication processes.…”

“…with thicker multiplication layer, the accompanying issues of broadened temporal distribution and afterpulsing effect emerge. By incorporating a unique structure design, our previous report on In0.53Ga0.47As/In0.52Al0.48As SPAD, which consists of a dual multiplication layer with an overall thickness of 500 nm, have achieved the best SPDE of 32 % and 26 % respectively at 187.5 K and room temperature with a moderate DCR of 200 MHz and 5 MHz [20], though it still falls behind the superb SPDE exceeding 60 % from recently reported InGaAs/InP SPADs [21][22][23]. In our previous work, the DCR originated from the high periphery electric field existing at the etched sidewall is the main obstacle to achieve higher SPDE.…”

Hybrid and heterogeneous photonic integrated near-infrared InGaAs/InAlAs single-photon avalanche diode

“…Promising single-photon detection performance of InGaAs/indium phosphide (InP) SPADs has been reported with the implementation of selective doping techniques (Zinc diffusion) along with the introduction of the floating guard rings in a planar structure to suppress edge breakdown and dark noise simultaneously [7][8][9][10][11]. In addition to InGaAs/InP SPADs, the mesa-type InGaAs/ indium aluminum arsenide (InAlAs) SPAD is another potential candidate with the features of lower process temperature, smaller footprint, and easier integration with the photonic devices [12][13][14].…”