Negative Capacitance Ferroelectric FET Based on Short Channel Effect for Low Power Applications

Kanithan, S.; Vignesh, N. Arun; Jana, Sanjay Kumar; Prasad, C.; Konguvel, E.; Vimalnath, S.

doi:10.1007/s12633-021-01625-z

Cited by 10 publications

(2 citation statements)

References 23 publications

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“…On the other hand, when the temperature rises, the inverse of amplified voltage grows. The definition of ferroelectric capacitance might help you understand this: 1 / C FE = 2 αt FE + 12 βt FE Q 2 [37]. When the temperature approaches T c , the maximum value of 2 αt FE , which overrides the negative capacitance, drops, causing the negative capacitance to grow.…”

Section: Resultsmentioning

confidence: 99%

Impact of temperature on a ferroelectric interfaced negative capacitance double gate junctionless accumulation mode field effect transistor-compact model

2023

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Ferroelectric interfaced negative capacitance field effect transistors are gaining popularity for low power applications; however, as temperature is a constant influencing factor, further study is required to comprehend how these devices are influenced. Through a proposed compact model, this paper analytically investigates the influence of temperature on a ferroelectric interfaced negative capacitance double gate junctionless accumulation mode field effect transistor. This device integrates the benefits of negative capacitance with the junctionless accumulation mode structure. An extensive comparison of the proposed device is made with the existing structure to evaluate the benefits offered by the ferroelectric layer at different temperatures. The Landau–Khalatnikov equation and Pao–Sah integral are employed to obtain the surface potential and drain current model with temperature variation. Various key parameters of the device have been analysed extensively by varying the temperature from 200 to 500 K. It has been found that internal voltage amplification declines as temperature rises, but the sub-threshold swing increases from 46 to 72 mV decade −1 with an increase in temperature. Additionally, with a progressive rise in temperature, the loss of gain and degradation of gate capacitance are observed.

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Section: Resultsmentioning

confidence: 99%

Impact of temperature on a ferroelectric interfaced negative capacitance double gate junctionless accumulation mode field effect transistor-compact model

2023

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“…Wearable frameworks have a few applications in close to home specialized device and clinical device as introduced in [1][2][3][4][5][6]. A preprint has previously been published [7].…”

Section: Introductionmentioning

confidence: 99%

Silicon Wearable Body Area Antenna for Speech‐Enhanced IoT and Nanomedical Applications

Vignesh¹,

Kumar

Rajarajan

et al. 2022

Journal of Nanomaterials

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We propose in this paper a reduction in the size of wearable antennas on silicon (Si) for medicinal frameworks and Internet of things (IoT) in various nanoapplications. This research also introduces one more type of dynamic patch antenna designed in favor of speech-enhanced healthcare applications. The most significant impediment to the adoption of smart correspondence and medical services frameworks is voice-enabled IoT. The primary objective of a body area network (BAN) is to give ceaselessly clinical information to the doctors. Actually, wireless body area network is flexible, dense, trivial, and less expensive. On the other hand, the main disadvantage is low efficiency for small printed antenna. Microstrip silicon antenna recurrence is changed because of ecological conditions, distinctive reception apparatus areas, and diverse framework activity modes. By using tunable antenna, the efficiency of bandwidth usage can be increased. Amplifiers are associated with the feed line of antenna in order to build its dynamic range. In this study, a dynamic polarized antenna is constructed, analysed, and attempted for fabrication. The gain of the antenna is 13 ± 2 dB for the frequency range of 390 to 610 MHz. The output of the polarized antenna is roughly 19 dBm. At different environmental conditions, the performance and ability to control the antenna could vary. To achieve stable performance, we have used varactor diode and voltage-controlled diode. This silicon wearable antenna can be fabricated and tested for many medical applications like health monitoring system and pacemakers. Furthermore, micromachining techniques can be used to lower the practical dielectric constant of silicon and hence improve radiation efficiency.

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Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials

Chen,

2023

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Steep subthreshold swing (SS) is a decisive index for low energy consumption devices. However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann Tyranny, which limits the scaling of SS to sub‐60 mV dec−1 at room temperature. Ferroelectric gate stack with negative capacitance (NC) is proved to reduce the SS effectively by the amplification of the gate voltage. With the application of 2D ferroelectric materials, the NC FETs can be further improved in performance and downscaled to a smaller dimension as well. This review introduces some related concepts for in‐depth understanding of NC FETs, including the NC, internal gate voltage, SS, negative drain‐induced barrier lowering, negative differential resistance, single‐domain state, and multi‐domain state. Meanwhile, this work summarizes the recent advances of the 2D NC FETs. Moreover, the electrical characteristics of some high‐performance NC FETs are expressed as well. The factors which affect the performance of the 2D NC FETs are also presented in this paper. Finally, this work gives a brief summary and outlook for the 2D NC FETs.

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Negative Capacitance Ferroelectric FET Based on Short Channel Effect for Low Power Applications

Cited by 10 publications

References 23 publications

Impact of temperature on a ferroelectric interfaced negative capacitance double gate junctionless accumulation mode field effect transistor-compact model

Impact of temperature on a ferroelectric interfaced negative capacitance double gate junctionless accumulation mode field effect transistor-compact model

Silicon Wearable Body Area Antenna for Speech‐Enhanced IoT and Nanomedical Applications

Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials

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