Negative charging-up contrast formation of multilayered structures with a nonpenetrating electron beam in scanning-electron microscope

Abstract

Articles you may be interested inAnalysis of electrical charging and discharging kinetics of different glasses under electron irradiation in a scanning electron microscopeIn this article, we explain the contrast-formation mechanisms of the scanning-electron microscope for insulating samples under a nonpenetrating irradiation condition. Our fundamental point is that the detected secondary-electron signal current is only modified by the surface potential distribution. We propose a semiempirical model to explain the image contrast caused by excess negative-charge buildup on the surface of the insulating samples. The model treats the redistribution of secondary electrons and the contribution of tertiary electrons. The image-contrast formation mechanism of two typical examples is explained.

Impact of B4C capping layer for extreme ultraviolet mask on the sensitivity of patterned mask inspection using a projection electron microscope

“…The SEEC of the nondoped Si layer, which had been used as the capping layer, shows a significant decrease with the increasing beam current, because the emitted SEs return back to the sample surface due to the strong positive charges involved. 16,17 These results indicate that the charging effect attributed to the B 4 C-capped ML is negligibly small as is the case with Ru-capped ML; the SE signal from the B 4 C-capped ML is not changed regardless of the electron dosage. Figure 4 shows the difference image between simulated PEM image with extrusion defects and that without defects.…”

Impact of B4C capping layer for EUV mask on the sensitivity of patterned mask inspection using projection electron microscope

“…Whereas the SEEC of the non-doped Si layer, which had been used as the capping layer, shows a significant decrease with the increasing beam current, because the emitted SEs return back to the sample surface due to the strong positive charges involved. [15][16] These results indicate that the charging effect attributed to the B 4 C capped ML is negligibly small as is the case with Ru capped ML; and the SE signal from the B 4 C capped ML is not changed regardless of the electron dosage. Figure 4 shows the difference image between simulated PEM image with extrusion defects and that without defects.…”

Characteristics of charge and discharge of PMMA samples due to electron irradiation

“…This occurrence of charge and discharge has significance in application fields of micromachining, space environment, and so on. [12][13][14][15] Therefore, it is important to understand characteristics of combinational charge and discharge processes for reducing impacts of charging effects.…”