Negative differential resistance in GaN nanowire network

Abstract

Negative differential resistance of gallium nitride nanowire networks deposited on an interdigitated electrode configuration patterned on a silicon dioxide/high resistivity Si substrate is experimentally demonstrated at room temperature. This effect is attributed to tunnelling between crossed gallium nitride nanowires.

Negative Differential Resistance in ZnO Nanowires Bridging Two Metallic Electrodes

“…An important phenomenon of electronic transport in low-dimensional systems is the negative differential resistance (NDR) effect in current–voltage ( I–V ) curve [3,4]. This effect can be used in switches and high-frequency oscillators [5].…”

Single nanowire AlN/GaN double barrier resonant tunneling diodes with bipolar tunneling at room and cryogenic temperatures

“…In general, NDR features observed in III-N semiconductor NW devices can be attributed to three different mechanisms: 11 (a) trapassisted inelastic tunneling; 12 (b) tunneling through potential barriers between NWs in a network; 13 (c) intervalley scattering. [14][15][16][17] The trap-assisted inelastic tunneling related NDR is commonly hysteretic, degrades after repeated scans, and disappears at low temperatures. [5][6][7]18 Thus, technically robust RTDs require resonant tunneling through the barriers ruling out any trap-assisted tunneling transport.…”

Observation of room-temperature negative differential resistance in Gd-doped Si nanowires on Si(110) surface

“…2(d), 3(b), and 3(d)], which are much smaller than those of GaN NWs, ZnO NWs, and organic molecules. 7,8,12 Thus, our fabricated massively parallel Gd-doped SiNW arrays can enable low-voltage nanoelectronic components used for logic circuits and memories.…”

“…Several mechanisms have been proposed to explain the observed NDR. [4][5][6][7][8][9][10][11][12][13] From a technological perspective, the achievement of NDR nanoelectronics based on one-dimensional (1D) nanomaterials can efficiently be implemented in logic and memory nanocircuits. 14,15 Therefore, CNTs and NWs are promising 1D nanomaterials as active components in NDR nanoelectronic devices.…”

“…[1][2][3] Motivated by the urge for electronic device miniaturization, NDR has been detected in tunneling conductance measurements for various low-dimensional systems, such as carbon nanotubes (CNTs), 4,5 semiconductor nanowires (NWs), [6][7][8] doped semiconductor surfaces, [9][10][11] and organic molecules, 12,13 by using scanning tunneling microscopy and spectroscopy (STM/STS). Several mechanisms have been proposed to explain the observed NDR.…”