Negative differential resistance of single barrier interband tunnelling diodes

Spin orientation due to longitudinal current and interband tunnelling in narrow-gap heterostructures

“…Computing the tunnelling probability for electrons in the InAs/AlGaSb/GaSb diode, the assumption of an infinite heavy hole mass was used. This assumption was discussed in [12]. We have also neglected the intervalley mechanism of the tunnelling current in all structures under consideration, and have supposed that the interband momentum matix element differs slightly for all materials of the structures.…”

“…Then ?Q can be of the order of y. For this structure, with parameters as listed in [12], this value can be of the order of 106cm-'. The difference AT can exceed 10% of T, in accordance with (9), if kll << !q.…”

“…The dependmcies of T* upon E1 are shown in figures 2 and 3 for the different values of AV, d = 5 x 10" cm and kll = 7 x lo5 cm-'. These curves have been calculated using the transfermatrix method for the InAs/AlGaSb/GaSb diode with parameters as given in [12].…”

Population inversion in narrow-gap heterostructures due to the interband tunneling

“…The tunneling coefficients T! (E,k,V(z)) for particles with different values of spin in (2) can be obtained for the two-band Dirac-like model using the transfer matrix presented in Zakharova et al [12] in a way similar to that of Khrenov et al [13]. These coefficients depend upon particle energy, lateral wave vector and the potential shape.…”

“…At first, the tunneling probability, and intraband and interband tunnel current components are determined for a given value of the external bias, using an approach similar to Khrenov et al [13], which applied the transfer matrix method to the Dirac-like model (see Zakharova et al [12]) and the dispersion law given by eqn (3). The occupation probability in the conduction band is governed by the Fermi-Dirac distribution with the Fermi level given by eqn (6), where n N " .…”