A new semiclassical method to calculate the characteristics of interband tunnelling devices is proposed. This method generalizes the approach developed earlier for the case of interfaces non-perpendicular to the particle wavevector. It aiiows one to obtain anaiyiicai expressions ior ?ne iunneiiing probabiiiiy T in semiconductor structures with abrupt heterojunctions. The characteristics of InAs/AIGaSb/lnAs, lnAs/AlGaSb/GaSb diodes are calculated using the developed method. All results are compared with those from the classical WKE approach and the transfer matrix method to determine the tunnelling probability.

A theoretical study of the tunnelling processes in broken-gap heterostructures is described. The analytical expressions for tunnelling probabilities T were obtained using the two-band approximation of the effectivemass method for singleand double-barrier structures made from InAs, AI,Ga,.,Sb and GaSb. It is shown that the effects of transformation of quasiparticles determine the properties of s u c h heterostructures.

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A new method based on the semiclassical approximation is proposed, which allows u s to calculate the characteristics of interband tunnelling devices with abrupt heterojunctions. It is shown that the tunnelling probability for a quasiparticle in the InAs/AIGaSb/lnAs structure obtained using this method differs strongly from that obtained using the conventional WKB approximation.