Negative temperature dependence of electron multiplication in In0.53Ga0.47As

Abstract

Minority electron mobilities in GaAs, In 0.53 Ga 0.47 As , and GaAs 0.50 Sb 0.50 calculated within an ensemble Monte Carlo model J. Appl. Phys. 109, 033716 (2011); 10.1063/1.3533963Carbon-doped In P ∕ In 0.53 Ga 0.47 As single and double heterojunction bipolar transistors grown by solidsource molecular-beam epitaxy

A rigorous theoretical analysis for an In0.53Ga0.47As/InP single photon avalanche photodiode under Geiger mode operation

“…The total dark count rate is underestimated if the impact ionization in the charge and absorption layer is ignored. Our calculation has demonstrated the importance of impact ionization in the In 0.35 Ga 0.47 As layer which has been reported to have a negative temperature dependence on electron ionization coefficients when the electric field is lower than 1.5 × 10 5 V cm −1 over the temperature range 200-300 K [20]. Let P d denote the total counts without taking into account the contribution of impact ionization in the charge and absorption layer; the underestimated ratio is defined as…”

Temperature dependence of breakdown and avalanche multiplication in In/sub 0.53/Ga/sub 0.47/As diodes and heterojunction bipolar transistors

“…5 suggest that the temperature sensitivity of ionization coefficients of In Ga As is small, as seen in the breakdown voltage ( [5], Fig. 2).…”

“…As stated previously, the modulation of the laser signal with lock-in detection rules out the adverse effects of the high dark currents. The can be obtained by extrapolating the multiplication curve using Miller's empirical expression [9] and was previously reported [5]. The breakdown voltages of all of the In Ga As p-i-n and n-i-p structures increase with increasing temperature.…”

“…Shamir et al [4] also observed no change with temperature of the hole ionization rates in In Ga As from electrical characteristics of p-n-p HBTs. Our previous results on breakdown of In Ga As p-i-n diodes [5] In Ga As is therefore of great importance in the case of an ionization coefficient which increases with temperature that can result in an unstable positive power dissipation feedback.…”

Different I–V Behaviors and Leakage Current Mechanisms in AlGaN Solar-Blind Ultraviolet Avalanche Photodiodes

“…In contrast, the avalanche device has a positive temperature coefficient, which has been demonstrated in our previous work . The temperature-dependent premature breakdown voltage confirms further that the leakage current is dominated by the tunneling process. , …”