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Electron multiplication for a series of In0.53Ga0.47As p-i-n diodes and hole multiplication for a n-i-p diode were measured at electric fields of 100–260 kV/cm over a temperature range of 20–300 K. The electron multiplication characteristics consistently showed positive temperature dependence at low electric fields (below ∼200 kV/cm) but exhibited negative temperature dependence at high fields. These observations explain the apparent discrepancies of the temperature dependence of the electron ionization coefficient in In0.53Ga0.47As in literature. In contrast, hole multiplication showed little change with temperature.

Minority electron mobilities in GaAs, In 0.53 Ga 0.47 As , and GaAs 0.50 Sb 0.50 calculated within an ensemble Monte Carlo model J. Appl. Phys. 109, 033716 (2011); 10.1063/1.3533963Carbon-doped In P ∕ In 0.53 Ga 0.47 As single and double heterojunction bipolar transistors grown by solidsource molecular-beam epitaxy

The electron saturation velocity in Ga0.52In0.48P has been measured as a function of temperature, utilizing the Kirk effect in double heterojunction bipolar transistors. An AlGaAs base was used to eliminate the conduction band spike, and measurements were carefully performed using pulse biasing to minimize self-heating. Voltage drops across the base and collector series resistances were also taken into account. The measured room temperature saturation velocity of 5.0×106 cm/s decreased rapidly to 2.9×106 cm/s at 200 °C. These results provide useful data for modeling and design, and are particularly important for the prediction of frequency performance of Ga0.52In0.48P/(Al)GaAs/Ga0.52In0.48P double heterojunction bipolar transistors when operating at typical elevated temperatures in power applications.

Abstract-The avalanche multiplication and impact ionization coefficients in In 0 53 Ga 0 47 As p-i-n and n-i-p diodes over a range of temperature from 20-400 K were measured and shown to have negative temperature dependence. This is contrary to the positive temperature dependence of the breakdown voltage measured on InP/In 0 53 Ga 0 47 As heterojunction bipolar transistors (HBTs) in this and previous works. It is shown that the collector-base dark current and current gain can be the overriding influence on the temperature dependence of breakdown in InP/In 0 53 Ga 0 47 As HBTs and could explain previous anomalous interpretations from the latter.