Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation

Kim, Dong-Gyu; Jongun, Kim; Lee, Jun-Sun; Park, Kwon‐Shik; Chang, Youn‐Gyoung; Kim, Myeong-Ho; Choi, Duck–Kyun

doi:10.1039/c9ra03053k

Cited by 35 publications

(21 citation statements)

References 25 publications

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“…The ε 2 values near the conduction band minimum (CBM) correlated with the electrical characteristics of the devices. 41,42 As shown in the graph, it can be easily noticed that the sub-gap state near CBM was reduced in the Al doped ITZO films by O 2 and N 2 O plasma treatment. Therefore, it can be inferred that the O 2 and N 2 O plasma treatment effectively reduced charge trap sites especially oxygen vacancies.…”

Section: Resultsmentioning

confidence: 86%

Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

Lee

Park

et al. 2019

RSC Adv.

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Section: Resultsmentioning

confidence: 86%

Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

Lee

Park

et al. 2019

RSC Adv.

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“…Regardless of the much higher drain current, a-IGZO TFTs is mostly used in the electronics industry due to its low temperature, simple deposition either on glass or flexible substrate compared to a-Si. 6,[29][30][31][32][34][35][36]38,43 Additionally, a-IGZO TFTs recorded better performance than Si-based TFTs, in-terms of SS as well as I on/off (Table 3). Alternatively, traditional Si-based TFT 11 has recorded limitations concerning the sophisticated fabrication process.…”

Section: Tft Simulation Modelmentioning

confidence: 98%

Simulating the I‐V characteristics of an ultrathin IGZO‐based thin film transistor using finite element method

Hussien

Abdellatif

2021

Int J Numerical Modelling

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Thin film transistors (TFTs) are ranked as one of the promising field-effect transistors in the electronic industry. TFTs showed a great potential in many applications where liquid crystal displays, touchscreens, and biosensors are of the leading. In the current study, we are demonstrating a numerical carrier transport model based on finite element method (FEM), to investigate InGaZnO (IGZO) based TFTs. Amorphous silicon TFT has been simulated as a bare device. The impact of scaling down the dimension of the TFT, up to 30 nm channel length, on the output performance characteristics of the transistor has been addressed. Additionally, the effects of active semiconductor layer doping concentration and oxide layer thickness have been investigated. Moreover, a novel approach is introduced to correlate the selected input design parameters with a set of characteristic outputs including threshold voltage, on/off current ratio, and subthreshold swing. The proposed model correlates input and outputs using a characteristic matrix with nine coefficients, making it possible to predict, that is, interpolate, the characteristic outputs within the system boundaries. The suggested model was verified with respect to input data as well as data from the literature showing a very acceptable agreement.

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“…The drain current (I DS ) versus gate voltage (V GS ) transfer curves of transistors with both a channel width (W) and a length (L) of 100 µm were measured at a drain voltage (V DS ) of 10.1 V. The threshold voltage (V th ) was extracted as the V GS corresponding to an L/Wnormalized I DS of 10 −6 A. In Figure 1b, the V th of the SiO 2 -passivated a-IGZO TFT was 0.5 V before the hydrogenation and severely degraded to −28.5 V after the hydrogenation, a result suggesting that abundant H dopants diffuse through the SiO 2 passivation layer into a-IGZO channel [18]. The TFTs with a sputtered-AlO X passivation layer were short-circuited by the hydrogenation (Figure 1c), while the extracted V th of the SiO 2 /AlO X -passivated TFT only shifted to −11 V (Figure 1d).…”

Section: Development Of Hydrogen-resistant A-igzo Tftsmentioning

confidence: 99%

Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors

et al. 2022

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The low–temperature poly–Si oxide (LTPO) backplane is realized by monolithically integrating low–temperature poly–Si (LTPS) and amorphous oxide semiconductor (AOS) thin–film transistors (TFTs) in the same display backplane. The LTPO–enabled dynamic refreshing rate can significantly reduce the display’s power consumption. However, the essential hydrogenation of LTPS would seriously deteriorate AOS TFTs by increasing the population of channel defects and carriers. Hydrogen (H) diffusion barriers were comparatively investigated to reduce the H content in amorphous indium–gallium–zinc oxide (a–IGZO). Moreover, the intrinsic H–resistance of a–IGZO was impressively enhanced by plasma treatments, such as fluorine and nitrous oxide. Enabled by the suppressed H conflict, a novel AOS/LTPS integration structure was tested by directly stacking the H–resistant a–IGZO on poly–Si TFT, dubbed metal–oxide–on–Si (MOOS). The noticeably shrunken layout footprint could support much higher resolution and pixel density for next–generation displays, especially AR and VR displays. Compared to the conventional LTPO circuits, the more compact MOOS circuits exhibited similar characteristics.

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Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation

Abstract: We studied the effect of X-ray irradiation on the negative threshold voltage shift of bottom-gate a-IGZO TFT. Based on spectroscopic analyses, we found that this behavior was caused by hydrogen incorporation and oxygen vacancy ionization.

Cited by 35 publications

References 25 publications

Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

Simulating the I‐V characteristics of an ultrathin IGZO‐based thin film transistor using finite element method

Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors

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