2014
DOI: 10.1002/smll.201400971
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Negative‐Tone Block Copolymer Lithography by In Situ Surface Chemical Modification

Abstract: Negative-tone block copolymer (BCP) lithography based on in situ surface chemical modification is introduced as a highly efficient, versatile self-assembled nanopatterning. BCP blends films consisting of end-functionalized low molecular weight poly(styrene-ran-methyl methacrylate) and polystyrene-block-Poly(methyl methacylate) can produce surface vertical BCP nanodomains on various substrates without prior surface chemical treatment. Simple oxygen plasma treatment is employed to activate surface functional gro… Show more

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Cited by 6 publications
(4 citation statements)
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References 50 publications
(82 reference statements)
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“…In this case, on top of the guiding stripe, the BCP presents a parallel oriented configuration, and on top of the background stripes, the polymer is oriented orthogonal to the direction of the guiding pattern. Similar patterns have been shown before. ,, This morphology resembles the simulation result in Figure a, indicating that it corresponds to a very strong preference of the guiding pattern. In our model of a random copolymer brush, the segments of the brush and the copolymer are structurally identical, and Figure b already employs the maximal preference of the guiding stripes within the random copolymer brush model.…”
Section: Resultssupporting
confidence: 85%
See 1 more Smart Citation
“…In this case, on top of the guiding stripe, the BCP presents a parallel oriented configuration, and on top of the background stripes, the polymer is oriented orthogonal to the direction of the guiding pattern. Similar patterns have been shown before. ,, This morphology resembles the simulation result in Figure a, indicating that it corresponds to a very strong preference of the guiding pattern. In our model of a random copolymer brush, the segments of the brush and the copolymer are structurally identical, and Figure b already employs the maximal preference of the guiding stripes within the random copolymer brush model.…”
Section: Resultssupporting
confidence: 85%
“…Similar patterns have been shown before. 19,22,[57][58][59] This morphology resembles the simulation result in Figure 3.a, indicating that it corresponds to a too strong preference of the guiding pattern. In our model of a random copolymer brush, the segments of the brush and the copolymer are structurally identical and Figure 3.b already employs the maximal preference of the guiding stripes within the random copolymer brush model.…”
Section: D) Simulationssupporting
confidence: 69%
“…Nonetheless, in order to fabricate novel and rather unique patterns of very specific dimensions [219,266,267] over a large area [223,266], as required by many state-of-the-art applications that include optical nanoresonators [268], nanoelectronic elements [269], bioreceptors [21], transistors [270], and others [271][272][273], it is necessary to further combine top-down and bottomup methodologies [28,205,268,269,274,275]. As a result, peculiar surface relief patterns down to the 10 nm scale [219,266,267] can be obtained through combinations of BCPL with NIL [28,205,268,269,275,276], of BCPL with EBL [270,273,277,278], of BCPL with photolithography [223,266,272], of DNA self-assembly with IBL [21], etc. Examples of the resulting surface relief patterns include 8 nm wide lines of PS-b-PDMS self-assembled in both straight and circular trenches [219] (Figure 13a), 10 nm PDMS spheres assembled in trenches [267], trenches with irregular features or trenches with the shape of jogs of various depths and lateral widths [273], dot-patterned domains of various heights spaced by patternless trenches of various lateral widths…”
Section: Patterning Through the Combination Of Bottom-up And Top-down Methodologiesmentioning
confidence: 99%
“…Subsequently, silicon oxide wafer was sufficiently oxygen plasma treated in vacuum chamber. This process removed most of the impurities on the substrate and provided a highly dense hydroxyl group (-OH) on silicon oxide wafer ( Figure 1a) [31,32].…”
Section: Fabrication Of Paritally Suspended G-fets 221 Pre-treatmementioning
confidence: 99%