Negative tone chemically amplified resist formulation optimizations for ultra high-resolution lithography

Saint-Pol, J.; Landis, S.; Gourgon, C.; Tedesco, S.; Hanawa, Ryotaro; Suetsugu, M.; Akita, M.; Yamamoto, Sumio

doi:10.1016/s0167-9317(03)00186-2

Cited by 7 publications

(2 citation statements)

References 5 publications

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“…It has high sensitivity, which is conducive to improving the efficiency of electron beam exposure and has strong dry corrosion resistance, which is conducive to the subsequent semiconductor processing technology, so it has broad application prospects in semiconductor technology. The chemically amplified photoresist was originally developed for deep ultraviolet exposure, but some studies have shown that it also has high sensitivity, high contrast and high resolution when used in the electron beam exposure process [13][14][15].…”

Section: Electron Beam Photoresistmentioning

confidence: 99%

Advanced Photoresists: Development, Application and Market

Tang¹

2023

HSET

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Photoresist refers to the corrosion-resistant film material whose solubility changes when irradiated or radiated by ultraviolet light, electron beam, ion beam, X-ray, etc. Engraving technology is a micromachining technology that uses the solubility change of photoresist under ultraviolet light or electron beam to transfer the pattern designed on the mask to the exposed substrate. With the continuous improvement of light sources for semiconductor processing, from G line and I line to KrF(248 nm) and then to ArF(193 nm), the matching photoresist is constantly changing to meet the requirements of sensitivity, transparency and etching resistance. Nowadays, extreme ultraviolet (EUV) lithography has become recognized as the next-generation lithography technology. This paper mainly introduces the development history, classification and application of photoresists and the related characteristics, principles and process flow of photoresists in different periods and systems. At the same time, the market situation of photoresists at home and abroad is introduced and analyzed, and the prospect of domestic development is also discussed.

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Section: Electron Beam Photoresistmentioning

confidence: 99%

Advanced Photoresists: Development, Application and Market

Tang¹

2023

HSET

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“…ZEP520 is capable of higher sensitivity, and exhibits better plasma etch resistance than PMMA, and but suffers from elevated line edge roughness (LER) because of polymer aggregates and entanglement effects due to large chain dimensions. CA resists, such as SAL-601 [3] and NEB31 [4], present high sensitivity and good etch resistance, but suffer from limited storage and post-exposure stability due to diffusion of the photoacid/base generator. In order to overcome the indicated limitations that typically affect most polymer or CA systems, new molecular resists have been developed.…”

Section: Introductionmentioning

confidence: 99%

Phenyl-bridged polysilsesquioxane positive and negative resist for electron beam lithography

Brigo¹,

Auzelyté²,

Lister³

et al. 2012

Nanotechnology

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We present and characterize an organic-inorganic hybrid sol-gel material, phenyl-bridged polysilsesquioxane (ph-PSQ), for use as a new high resolution resist for electron beam lithography (EBL). The resist has a unique characteristic as the only positive tone silica-based resist available for EBL. Exploring the processing parameters has revealed that it is possible to switch the behaviour from negative to positive tone by application of a post-exposure bake (PEB). Based on the results from micro-FTIR spectroscopy, a description of the tone switching mechanisms is proposed. The negative tone behaviour is explained by the etch rate difference between silanol groups and cross-linked silica, present in unexposed and in exposed areas of the films, respectively. In the case of positive tone, after a PEB, the etch rate difference between a thermally densified cross-linked silica network and cage-like silica structures allows us to reveal the pattern. Contrast and sensitivity are estimated under different processing conditions, and the significant parameters for line edge roughness minimization are pointed out. Dense patterns down to 25 nm half-pitch and isolated structures down to 30 nm are demonstrated, exploiting the positive tone, and dense patterns down to 60 nm half-pitch are demonstrated in the negative tone. Etching selectivities in fluorinated gases for ph-PSQ nanostructures on silicon substrates are 1-9 for the positive tone and 1-12 for the negative tone.

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