Proceedings of 15th IEEE/CHMT International Electronic Manufacturing Technology Symposium
DOI: 10.1109/iemt.1993.398165
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Neural network control of a plasma gate etch: Early steps in wafer-to-wafer process control

Abstract: We have developed a gate oxide thickness controller for a plasma etch reactor. This controller is for a 0.9 um technology currently being manufactured in our Orlando CMOS fab line. By monitoring certain process signatures aren feeding them forward into a neural network trained by the backpropagation method, it is possible to predict in real time the correct over etch time on a wafer-by-wafer basis. Computer simulations indicate that the neural network is equivalent to humans for this task.The uniqueness of thi… Show more

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Cited by 7 publications
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