2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) 2015
DOI: 10.1109/imfedk.2015.7158564
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Neuron MOS inverter and source follower using thin-film transistors

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Cited by 2 publications
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“…1b is implemented by the weighted synapse portion of Fig. 1a , which is a capacitive voltage adder just like those used in neuMOS devices [8,10]. We can write The inputs in each case is swept from −0.4V to +0.4V in 1 µs.…”
Section: Building Blockmentioning
confidence: 99%
“…1b is implemented by the weighted synapse portion of Fig. 1a , which is a capacitive voltage adder just like those used in neuMOS devices [8,10]. We can write The inputs in each case is swept from −0.4V to +0.4V in 1 µs.…”
Section: Building Blockmentioning
confidence: 99%