Neutron irradiation test of depleted CMOS pixel detector prototypes

Mandić, I.; Cindro, V.; Gorišek, A.; Hiti, B.; Kramberger, G.; Mikuž, M.; Zavrtanik, M.; Hemperek, T.; Daas, M.; Huegging, F.; Krüger, H.; Pohl, D.; Wermes, N.; Gonella, L.

doi:10.1088/1748-0221/12/02/p02021

Cited by 33 publications

(51 citation statements)

References 37 publications

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“…but it is consistent with a similar measurement with LFoundry samples from [17]. No decrease of N eff with fluence -a strong indication of initial acceptor removal -was observed in this work.…”

Section: Edge-tctsupporting

confidence: 93%

“…No decrease of N eff with fluence -a strong indication of initial acceptor removal -was observed in this work. In measurements in [17] a decrease of N eff was measured at 1·10 13 n eq /cm 2 and 5·10 13 n eq /cm 2 and acceptor removal parameters could be estimated. But it should be noted that the initial resistivity of samples measured in [17] was ∼2 kΩcm while for samples measured in this work it is over 3 kΩcm (see Fig.…”

Section: Edge-tctmentioning

confidence: 99%

“…Promising results showing sufficient radiation hardness of depleted CMOS detectors from various designs and producers were published in a large number of publications -references [8]- [17] represent just a few more recent ones. CMOS technology is being investigated as an option for the outermost layer of the pixel detector in the upgraded ATLAS experiment [6] where expected displacement damage in silicon caused by energetic hadrons will be equivalent to the damage caused by a fluence of 2·10 15 1 MeV neutrons per cm 2 [2].…”

Section: Introductionmentioning

confidence: 99%

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Charge-collection properties of irradiated depleted CMOS pixel test structures

Mandić

Cindro

Gorišek

et al. 2018

Nuclear Instruments and Methods in Physics Research Section A:

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Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 kΩcm are presented. Measurements were made before and after irradiation with reactor neutrons up to 2·10 15 n eq /cm 2 . Two sets of devices were investigated: unthinned (700 µm) with substrate biased through the implant on top and thinned (200 µm) with processed and metallised backplane. Depletion depth was estimated with Edge-TCT and collected charge was measured with 90 Sr source using an external amplifier with 25 ns shaping time. Depletion depth at given bias voltage decreased with increasing neutron fluence but it was still larger than 70 µm at 250 V after the highest fluence. After irradiation much higher collected charge was measured with thinned detectors with processed backplane although the same depletion depth was observed with Edge-TCT. Most probable value of collected charge of over 5000 electrons was measured also after irradiation to 2·10 15 n eq /cm 2 . This is sufficient to ensure successful operation of these detectors at the outer layer of the pixel detector in the ATLAS experiment at the upgraded HL-LHC.

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Section: Edge-tctsupporting

confidence: 93%

Section: Edge-tctmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Charge-collection properties of irradiated depleted CMOS pixel test structures

Mandić

Cindro

Gorišek

et al. 2018

Nuclear Instruments and Methods in Physics Research Section A:

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“…The rate of initial acceptor removal depends on concentration [21], therefore different doping profiles could lead to different post irradiation gains, even when similar before irradiation. The two producers have different processes, but the comparison of devices with similar initial gain exhibited little difference in charge vs. voltage dependence as shown in Fig.…”

Section: Neutron Irradiated Sensorsmentioning

confidence: 99%

Radiation hardness of thin Low Gain Avalanche Detectors

Kramberger

Carulla

Cavallaro

et al. 2018

Nuclear Instruments and Methods in Physics Research Section A:

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Low Gain Avalanche Detectors (LGAD) are based on a n ++ -p + -p-p ++ structure where an appropriate doping of the multiplication layer (p + ) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 µm). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5 · 10 15 cm −2 . Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (∼300 µm) and offer larger charge collection with respect to detectors without gain layer for fluences < 2 · 10 15 cm −2 . Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no Work performed in the framework of the CERN-RD50 collaboration.

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“…According to the results, the effective doping of p-doped silicon can be described with (see e.g. [33]):…”

Section: Non-ionizing Radiation Damagementioning

confidence: 99%

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

Deveaux

2019

J. Inst.

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A: CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate sensing elements together with analogue and digital data processing circuits into one monolithic chip. This turns into 50 µm thin sensors, which provide an outstanding typical spatial resolution of few µm and a detection efficiency for minimum ionizing particles above 99.9%. The radiation tolerance of CPS was initially constrained by the limits of the CMOS processes used for their production but has been improved by orders of magnitudes during the last years.This work reviews the related R&D on the radiation tolerance of traditional CPS with partially depleted active medium as pioneered by the MIMOSA-series developed by the IPHC Strasbourg. Procedures for assessing radiation damage in those non-standard pixels are discussed and the major mechanisms of radiation damage are introduced. Techniques for radiation hardening are shown. Moreover, recent results on next generation CPS featuring fully depleted sensors based on improved CMOS processes are summarized.

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Neutron irradiation test of depleted CMOS pixel detector prototypes

Cited by 33 publications

References 37 publications

Charge-collection properties of irradiated depleted CMOS pixel test structures

Charge-collection properties of irradiated depleted CMOS pixel test structures

Radiation hardness of thin Low Gain Avalanche Detectors

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

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