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Thompson, M.C.

doi:10.1103/physrevc.2.763

Cited by 34 publications

(56 citation statements)

References 6 publications

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“…As illustrated in figure 2.4b, this means that at some point in time, there is a population of small grains and large grains and the shape of the grain size distribution is not time-invariant. In literature, this growth mode is referred as abnormal grain growth and since abnormal grain growth often occurs after significant normal grain growth, it is also known as secondary grain growth [61]. There can be several reasons why in most of the cases abnormal grain growth is observed instead of normal grain growth.…”

Section: Normal and Abnormal Grain Growth In Thin Filmsmentioning

confidence: 99%

Increasing the mean grain size in copper films and features

et al. 2008

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A new grain-growth mode is observed in thick sputtered copper films. This new grain-growth mode, also referred to in this work as super secondary grain growth (SSGG) leads to highly concentric grain growth with grain diameters of many tens of micrometers, and drives the system toward a {100} texture. The appearance, growth dynamics, final grain size, and self-annealing time of this new grain-growth mode strongly depends on the applied bias voltage during deposition of these sputtered films, the film thickness, the post-deposition annealing temperature, and the properties of the copper diffusion barrier layers used in this work. Moreover, a clear rivalry between this new growth mode and the regularly observed secondary grain-growth mode in sputtered copper films was found. The microstructure and texture evolution in these films is explained in terms of surface/interface energy and strain-energy density minimizing driving forces, where the latter seems to be an important driving force for the observed new growth mode. By combining these sputtered copper films with electrochemically deposited (ECD) copper films of different thickness, the SSGG growth mode could also be introduced in ECD copper, but this led to a reduced final SSGG grain size for thicker ECD films. The knowledge about the thin-film level is used to also implement this new growth mode in small copper features by slightly modifying the standard deposition process. It is shown that the SSGG growth mode can be introduced in narrow structures, but optimizations are still necessary to further increase the mean grain size in features.

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Section: Normal and Abnormal Grain Growth In Thin Filmsmentioning

confidence: 99%

Increasing the mean grain size in copper films and features

et al. 2008

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“…This indicates the kinetically favored orientational stacking of ZnPc molecules in the film. The theoretical model given by Hillert [32][33][34] to describe the normal grain growth mechanism, iṡ…”

Section: Growth Mechanism Of Znpc Lb Thin Film On Annealingmentioning

confidence: 99%

Effect of annealing on the growth dynamics of ZnPc LB thin film and its surface morphology

2014

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The ZnPc molecules in the thin film prepared by Langmuir-Blodgett (LB) process in asdeposited state has been found to have an edge on orientation with average tilt angle of 64.3 ° as confirmed from the Pressure-Area (π-A) isotherm and X-ray diffraction (XRD) study. The ZnPc LB thin film has been observed to have abnormal growth mode at higher annealing temperature and it is mainly driven by minimization of surface free energy which lead to large increase in crystallinity of the film. Kinetically favored orientational and structural transitions of ZnPc thin film during annealing and their effect on the surface morphology of the thin film has been studied using scaling concepts. The scaling exponents 1) root mean square (RMS) roughness σ, 2) roughness exponent α and, 3) in plane correlation length ξ are calculated from the HDCF g(r) and ACF C(r). The RMS surface roughness σ is found to be dependent on the as defined short wavelength undulations (ρ) and long wavelength undulations (χ). Both ρ and χ are the function of all the three scaling exponents. σ has been observed to be maximum for the ZnPc thin film annealed at 290 °C, since the χ shoot to maximum value at this temperature due to the formation of small domains of ZnPc nanorods. The self affinity of the ZnPc thin film is found to decrease on annealing as obtained from both power spectral density (PSD) and HDCF g(R) & ACF C(R) study, which confirms that the dimension of surface morphology of the ZnPc LB thin film transform towards 2D with increase in annealing temperature.

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“…We already reported that grain enlargement of poly-Si under the solid phase occurs upon multishot laser irradiation at low energy density. The theory of secondary grain growth by the solid phase was studied by Thompson,31) who assumed that the driving force of secondary grain growth is the energy of the grain boundary and film surface. Our proposed model also assumes the solid phase process.…”

Section: Crystallization Modelmentioning

confidence: 99%

Stress Relaxation of Poly-Si Film Formed by Excimer Laser Annealing

Matsuo

2005

Mater. Trans.

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We investigated the low-temperature processed polycrystalline-silicon (poly-Si) film formed by carrying out low-energy-density and multishot excimer laser annealing (ELA) of amorphous Si (a-Si) film on a glass or quartz substrate. The influence of secondary grain growth which grain size becomes larger than the film thickness on the tensile stress relaxation of the poly-Si film was clarified. Relationship between hydrogens which are supplied to the melt-Si from the bottom catalytic-chemical vapor deposition (Cat-CVD) SiN film and the stress relaxation was also examined. The tensile stress in the poly-Si film relaxes upon the appearance of the secondary grains, and the stress decreases with increasing diameter of the secondary grains. However, the hydrogen supply to melt-Si suppresses the secondary grain growth and the stress relaxation becomes marked as the hydrogen concentration decreases. Furthermore, the relationship between the dangling bond density corresponding to the crystal defect density and grain size was investigated, and the defect site was clarified. Lastly, the recrystallization model by ELA at low energy densities was discussed. The model was constructed based on the experimental data that the secondary grain growth occurs suddenly at the critical energy density and the critical shot number, and it was shown that the present model is consistent with the results related to the hydrogen concentration and the secondary grain growth.

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Neutrons Emitted in Spontaneous Fission ofCm246

Cited by 34 publications

References 6 publications

Increasing the mean grain size in copper films and features

Increasing the mean grain size in copper films and features

Effect of annealing on the growth dynamics of ZnPc LB thin film and its surface morphology

Stress Relaxation of Poly-Si Film Formed by Excimer Laser Annealing

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