New analysis methods for comprehensive understanding of Random Telegraph Noise

Nagumo, T.; Takeuchi, Kiyoshi; Yokogawa, Shinji; Imai, Ko; Hayashi, Y.

doi:10.1109/iedm.2009.5424230

Cited by 100 publications

(67 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The main idea is that, because the number of active traps in today's devices is small (averaging about 1 to 2 [10], [12], [13]), each trap can be stochastically simulated (for example, alongside a SPICE run). Whenever such a simulation predicts an RTN-induced failure, it is possible to examine the simulation trace to investigate the RTN events that triggered the failure.…”

Section: Existing Methods For Rtn Characterizationmentioning

confidence: 99%

“…We note that, even though the number of active device traps may average only 1 to 2 [10], [12], [13], the actual number is often a Poisson random variable [2], [12], which occasionally assumes a value much greater than average. For example, consider the Intel Core i7 processors that have 8 MB of shared L3 (SRAM) cache memory.…”

Section: B Statistical Inferences About Rtn-induced Sram Failuresmentioning

confidence: 99%

“…For today's small devices, however, this assumption is invalid [2], [10], [11]. Detailed trap profile models (corroborated by measured data) suggest that, in deeply scaled technologies, only about one to two traps are active at any given bias [2], [10], [12], [13], causing significant inter-device variation. For example, Fig.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs

Aadithya

Demir

Venugopalan

et al. 2013

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

View full text Add to dashboard Cite

Abstract-With aggressive technology scaling and heightened variability, circuits such as SRAMs and DRAMs have become vulnerable to random telegraph noise (RTN). The bias dependence (i.e., non-stationarity), bi-directional coupling, and high inter-device variability of RTN present significant challenges to understanding its circuit-level effects. In this paper, we present two computer-aided design (CAD) tools, SAMURAI and MUS-TARD, for accurately estimating the impact of non-stationary RTN on SRAMs and DRAMs. While traditional (stationary) analysis is often overly pessimistic (e.g., it overestimates RTNinduced SRAM failure rates), the predictions made by SAMURAI and MUSTARD are more reliable by virtue of non-stationary analysis.

show abstract

Section: Existing Methods For Rtn Characterizationmentioning

confidence: 99%

Section: B Statistical Inferences About Rtn-induced Sram Failuresmentioning

confidence: 99%

See 1 more Smart Citation

Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs

Aadithya

Demir

Venugopalan

et al. 2013

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

View full text Add to dashboard Cite

show abstract

“…A TLP is drawn by plotting the i-th point of the RTN signal in the x-axis and the (i+1)-th point in the y-axis for the full RTN trace [23]. Across the diagonal of the plot, every populated spot corresponds to one level of the RTN, whereas populated spots outside the diagonal correspond to transitions between states (Fig.…”

Section: Analysis Proceduresmentioning

confidence: 99%

New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

Maestro

Díaz

Crespo-Yepes

et al. 2016

Solid-State Electronics

View full text Add to dashboard Cite

Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. The standard equipment used to analyse RTN has a typical time resolution of ~2ms which prevents evaluating fast phenomena.In this work, a new RTN measurement procedure, which increases the measurement time resolution to 2µs, is proposed. The experimental set-up, together with the recently proposed Weighted Time Lag (W-LT) method for the analysis of RTN signals, allows obtaining a more detailed and precise information about the RTN phenomenon.

show abstract

“…Discrete drain current fluctuations, known as random telegraph noise (RTN), are observed in MOSFETs under constant bias conditions and are considered to be caused by charge-transport fluctuations due to the capture/emission of carriers at single traps. It has been pointed out that RTN will become one of the greatest reliability issues in scaled-down digital devices [6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs

Tsuchiya

Yoshida

Sakuraba

et al. 2011

KEM

View full text Add to dashboard Cite

Abstract. Transient phenomena related to carrier capture/emission processes in interface traps were observed in the the charge pumping (CP) characteristics of SiGe/Si hetero-channel pMOSFETs, i.e., the CP characteristics were found to depend on the on/off time of the gate pulse. From these observations, time constants for the processes both in SiGe/Si heterointerface traps and in gate-oxide interface traps were derived. The time constant is considered to depend on the energy level of the interface traps that are present over a wide range within the energy gap. Therefore, these phenomena provide an interesting way of evaluating the discrete energy levels of interface traps in nanometer-scale devices containing only a few traps.

show abstract

New analysis methods for comprehensive understanding of Random Telegraph Noise

Cited by 100 publications

References 1 publication

Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs

Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs

New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs

Contact Info

Product

Resources

About