Photoluminescence (PL) under a magnetic field
(B = 0–12 T) has been employed to determine the electron effective mass,
me*, exciton radius,
rexc, and degree of
localization of carriers in InxGa1−xAs1−yNy/GaAs
heterostructures. This study concerns nitrogen concentration values spanning from a very dilute
(y<0.1%) to a full alloy
(y = 5%) limit and indium
concentrations x
from 0% to . For indium-free samples, we find that
me*
and rexc
undergo a sudden increase and squeezing, respectively, for . For indium-containing samples (), me* and
rexc show a sudden variation
similar to that for x = 0
but shifted to much higher N concentration (). In addition, in the N alloy limit the temperature dependence of the
B-induced shift of the PL peak position reveals that radiative recombination at low
temperature is not excitonic.