Despite their favorable electronic
and structural properties, the
synthetic development and incorporation of thiazole-based building
blocks into n-type semiconductors has lagged behind
that of other π-deficient building blocks. Since thiazole insertion
into π-conjugated systems is synthetically more demanding, continuous
research efforts are essential to underscore their properties in electron-transporting
devices. Here, we report the design, synthesis, and characterization
of a new series of thiazole–thiophene tetra- (1 and 2) and hexa-heteroaryl (3 and 4) co-oligomers, varied by core extension and regiochemistry,
which are end-functionalized with electron-withdrawing perfluorohexyl
substituents. These new semiconductors are found to exhibit excellent n-channel OFET transport with electron mobilities (μ
e
) as high as 1.30 cm2/(V·s)
(I
on/I
off >
106) for films of 2 deposited at room temperature.
In contrary to previous studies, we show here that 2,2′-bithiazole
can be a very practical building block for high-performance n-channel semiconductors. Additionally, upon 2,2′-
and 5,5′-bithiazole insertion into a sexithiophene backbone
of well-known DFH-6T, significant charge transport improvements
(from 0.001–0.021 cm2/(V·s) to 0.20–0.70
cm2/(V·s)) were observed for 3 and 4. Analysis of the thin-film morphological and microstructural
characteristics, in combination with the physicochemical properties,
explains the observed high mobilities for the present semiconductors.
Finally, we demonstrate for the first time implementation of a thiazole
semiconductor (2) into a trilayer light-emitting transistor
(OLET) enabling green light emission. Our results show that thiazole
is a promising building block for efficient electron transport in
π-conjugated semiconductor thin-films, and it should be studied
more in future optoelectronic applications.