New Directions for Low‐Dimensional Thermoelectric Materials

Abstract

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Thermoelectric properties of copper selenide with ordered selenium layer and disordered copper layer

“…Normally, κ is composed of three components, i.e., electronic contribution (κ car ), lattice contribution (κ lat ), and bipolar contribution (κ bipolar ). As reducing κ lat was proven to be the easiest and most straightforward way to improve ZT, numerous efforts have been devoted in the last two decades in order to increase the ZT value from the longstanding 1.0 in thermoelectric bulk materials to higher values by minimizing κ lat through the concept of nanocomposite [1][2][3][4]. The key idea of nanocomposite is to create grains or inclusions that scatter the phonons without deteriorating the electron transport.…”

Suppression of grain growth by additive in nanostructured p-type bismuth antimony tellurides

“…shows that nanostructures produced in p-type Bi 2 Te 3 -based bulk materials can significantly enhance the ZT value by reducing the thermal conductivity via effective phonon scattering without too much affecting the power factor (S 2 σ) [8,9]. Bulk materials with different nanostructures embedded in the Bi x Sb 2-x Te 3 matrix are achieved by hot pressing nanopowders prepared by various methods, such as hydrothermal technique [4,11], ball milling [10], and melt spinning [12].…”

Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution

“…T h e m a i n o f t h e m i s c a u s e d b y new scientific results on improve of the thermoelectric figure of merit. Important results in the development of highly effective nanostructured thermoelectric materials have been published last decade; see for example the reviews (Dresselhaus et al, 2007;Minnich et al, 2009;Dmitriev & Zvyagin, 2010;Lan et al, 2010). The thermoelectric efficiency ZT = 2.4 has been reached at T = 300K in the p-type semiconductor Bi 2 Te 3 /Sb 2 Te 3 in superlattices with quantum wells (Venkatasubramanian et al, 2001); the estimation indicates that the value ZT ~ 3.5 has been received at T = 575 K in nanostructured n-type PbSeTe/PbTe with quantum dots (Harman et al, 2000(Harman et al, , 2005.…”