New Dual-Dielectric Gate All Around (DDGAA) RADFET dosimeter design to improve the radiation sensitivity

Meguellati, M.; Djeffal, F.

doi:10.1016/j.nima.2012.04.072

Cited by 31 publications

(8 citation statements)

References 9 publications

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“…Moreover, the 2-dimensional planar structure of the MOSFET has secondary effects such as a short-channel effect [2]. To overcome these limitations, various solutions have been suggested in terms of devices and circuit design [3][4][5][6][7][8][9][10]. Among them, monolithic 3-dimensional integration (M3DI), which allows the vertical stacking of transistors, logic gates, and memory devices, is a promising technology for future chip design [11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD

Oh,

2023

Micromachines

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In this study, the electrical characteristics and electrical coupling effect for monolithic 3-dimensional nonvolatile memory consisting of a feedback field-effect transistor (M3D-NVM-FBFET) were investigated using technology computer-aided design. The M3D-NVM-FBFET consists of an N-type FBFET with an oxide–nitride–oxide layer and a metal–oxide–semiconductor FET (MOSFET) in the top and bottom tiers, respectively. For the memory simulation, the programming and erasing voltages were applied at 18 and −18 V for 1 μs, respectively. The memory window of the M3D-NVM-FBFET was 1.98 V. As the retention simulation was conducted for 10 years, the memory window decreased from 1.98 to 0.83 V. For the M3D-NVM-FBFET, the electrical coupling that occurs through an electrical signal in the bottom-tier transistor was investigated. As the thickness of the interlayer dielectric (TILD) decreases from 100 to 10 nm, the change in the VTH increases from 0.16 to 0.87 V and from 0.15 to 0.84 V after the programming and erasing operations, respectively. M3D-NVM-FBFET circuits with a thin TILD of 50 nm or less need to be designed considering electrical coupling.

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Section: Introductionmentioning

confidence: 99%

Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD

Oh,

2023

Micromachines

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“…in the contaminated or dangerous environment for humankinds [4][5][6][7][8][9][10][11]. With regards to complex surgeries, the researchers invented miniature endoscopic capsule robot capable to discover intestinal conduits, arteries or veins, for helping the surgeons in their diagnosis, based on the entirety of submicron embedded sensors [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…With regards to complex surgeries, the researchers invented miniature endoscopic capsule robot capable to discover intestinal conduits, arteries or veins, for helping the surgeons in their diagnosis, based on the entirety of submicron embedded sensors [4][5][6]. As for military applications, the researchers have developed a microrobot capable to drawn maps of the nuclear area or define large moving targets [7][8][9][10]. Hence, the micro robots can be considered as an attractive alternative solution for countless scientific challenges in the future.…”

Section: Introductionmentioning

confidence: 99%

Analytical models and optimization of novel swimming microrobot using ABC computation for biomedical applications

Meguellati

Srairi

Djeffal

et al. 2014

2014 15th International Conference on Sciences and Techniques of Automatic Control and Computer Engineering (STA)

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Swimming microrobots have been broadly considered and drawn great attention for the mainly recent years, in robotics and biomedical domains, due to their alternative applications. This work models and optimizes a new swimming microrobot design for biomedical applications. The key idea behind this contribution is to find out the best dimension and electromechanical parameters of the investigated swimming microrobot that will yield the maximum thrust force for reliable swimming microrobot applications. The analytical models are developed to calculate the thrust force generated by a hybrid tail. The microrobot is modulated using a nonlinear model-based approach for magnetical control. We show that our proposed device can be significantly improved by using the IPCM hybrid tails with thick link at the end of the tail. Furthermore, the artificial bee colony algorithm is used to ameliorate both, electromechanical parameters and the microrobot geometrical aspect, in order to enhance the performance and robustness behavior of the investigated microrobot. In this context, thrust force of the investigated structure is examined and compared with the conventional microrobots. The obtained results demonstrate that the proposed design can be considered as a potential candidate for high performance microrobot-based applications.

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“…Based on this fact, additional efforts are paid to the investigation of efficient MOSFET geometries for dosimetric purposes, where the basic concept of developed dosimeters is to transform the threshold voltage shift, induced by radiation, into absorbed radiation dose (D) [8]. In this context, we propose a new RADFET dosimeter based on the junctionless GAA MOS-FET structure.…”

Section: Introductionmentioning

confidence: 99%

New junctionless RADFET dosimeter design for low‐cost radiation monitoring applications

Arar¹,

Djeffal²,

Bentrcia³

et al. 2013

Phys. Status Solidi C

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This paper is devoted to the presentation of a quantitative analysis of the Junctionless Gate All Around RADFET (JL GAA RADFET) dosimeter, where the numerical simulation has been carried out using the Atlas 3‐D simulator. The impact of the total dose, alternative gate materials and the channel doping on the threshold voltage of the JL GAA RADFET is addressed. The obtained results have indicated a significant improvement in the subthreshold parameters when compared to the conventional GAA RADFET dosimeter. Therefore, the implementation of junctionless‐based sensors in the near future can provide more accurate results with low costs, in addition to alleviating many difficulties in the measurement procedure. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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New Dual-Dielectric Gate All Around (DDGAA) RADFET dosimeter design to improve the radiation sensitivity

Cited by 31 publications

References 9 publications

Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD

Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD

Analytical models and optimization of novel swimming microrobot using ABC computation for biomedical applications

New junctionless RADFET dosimeter design for low‐cost radiation monitoring applications

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