New experimental evidence for origin of ferromagnetism ordering in Fe-doped SiC

Structural and magnetic properties of pulsed laser deposited Fe–SiC thin films

“…Though, ternary iron silicocarbides like Fe 5 SiC will decompose above 863 K [29]. The second possible reason may be the presence of binary Fe-Si compound Fe 3 Si which is a typical FM material with a T c of 840 K [19]. The annealing of Fe-SiC thin films at 1073 K and 1273 K temperature and the formation of Fe 3 Si phase during annealing support the latter case for ferromagnetism in our samples.…”

“…The coercivity of the as-deposited sample is found to be~2.9 × 10 3 A/m which significantly increases to~11.5 × 10 3 A/m for annealed sample at 1073 K, with increase in annealing temperature from 1073 to 1273 K, it decreases to~5.6 × 10 3 A/m. The low coercivity of as-deposited Fe-SiC thin films ascribed to the amorphous nature [24], while the high coercivity of annealed Fe-SiC thin films (1073 K) may be due to the crystalline nature and formation of Fe 3 Si phase [5,19,[25][26][27]. The decrease in coercivity with increase in annealing temperature may be associated with change in grain size.…”

“…2b and c. Fe-SiC film annealed at 1073 K shows the pyramidal-like structure of grains due to the crystalline nature of sample after annealing. We have observed the large grain size with an increase in annealing temperature at 1273 K. This change may be attributed due to further improvement in the crystallinity and agglomeration of grains of SiC and other phases like Fe 3 Si, SiO 2 and FeSiO 3 appeared at high annealing temperature [19]. The elemental composition of as-deposited sample was estimated by fitting the RBS spectra (Fig.…”

Magnetic Properties of Al‐doped B4C and SiC Ceramics

“…As for the magnetic behavior in the Al‐doped SiC system, there were diversified interpretations in different reports. Some reported that the magnetic behaviors attributed to the dopants . Some claimed that the defects dominated by the vacancies were responsible for the observed magnetization .…”

Diluted magnetic semiconductor effects in Mn-implanted silicon carbide

“…Early experimental studies showed evidence of the FM response in Ni-, Mn-, and Fe-doped SiC with the T C values varying from significantly below to close to room temperature. 7 Experimental studies of the Mn-implanted 3C-SiC/Si heteroepitaxial structure, 8 of C-incorporated Mn-Si films grown on 4H-SiC wafers, 9 a later detailed report by the same authors on structural, magnetic, and magneto-optical properties of Mn-doped SiC films prepared on 3C-SiC wafers, 10 and studies of low-Mn-doped 6H-SiC 11 and polycrystalline 3C-SiC, 12 all suggested Mn to be a promising impurity choice for achieving high FM ordering temperatures in SiC DMSs. Later experimental reports on Crdoped SiC suggested this material to be ferromagnetic with the T C $70 K for a Cr concentration of $0.02 wt.…”