2000
DOI: 10.1016/s0026-2714(99)00331-5
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New experiments on the electrodeposition of iron in porous silicon

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Cited by 21 publications
(10 citation statements)
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“…1 Dealing with the introduction of metals into the pores, [2][3][4][5][6][7][8][9][10][11][12][13][14] special attention was paid to the realization of deep electrical contact with the pore walls to improve the electroluminescence efficiency. 1 Dealing with the introduction of metals into the pores, [2][3][4][5][6][7][8][9][10][11][12][13][14] special attention was paid to the realization of deep electrical contact with the pore walls to improve the electroluminescence efficiency.…”
Section: Introductionmentioning
confidence: 99%
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“…1 Dealing with the introduction of metals into the pores, [2][3][4][5][6][7][8][9][10][11][12][13][14] special attention was paid to the realization of deep electrical contact with the pore walls to improve the electroluminescence efficiency. 1 Dealing with the introduction of metals into the pores, [2][3][4][5][6][7][8][9][10][11][12][13][14] special attention was paid to the realization of deep electrical contact with the pore walls to improve the electroluminescence efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…[4][5][6]8 The substitution of easily broken Si-H bonds with solid metal-Si ones has also been of concern to stabilize the luminescence properties of this material. 2,10 For the commonly used templates, i.e. Indeed, the introduction of ferromagnetic iron-group metals in a such PS structure would lead to new potential systems for magnetic memory, storage disk, and microwave applications.…”
Section: Introductionmentioning
confidence: 99%
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“…The pores have however an ink-bottle shape, which results from the fact that the hole concentration is not constant close to the surface. This effect can be avoided by means of a two step formation of PS [10]. At high HF concentration (35 wt% HF), the pores still propagate along the ͗100͘ direction, but they have very branched walls and they form a very 250 nm 500 nm 35% HF-EtOH ; 3 mA/cm 2 ; 300 s 15% HF-EtOH ; 3 mA/cm 2 ; 300 s rough interface with the Si substrate.…”
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confidence: 99%