New Generation of Z-RAM

Overview and future challenges of floating body RAM (FBRAM) technology for 32nm technology node and beyond

“…Some kinds of capacitor-less DRAM cell have been proposed and developed [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. Floating body cell (FBC) is a promising candidate in view of its simple structure and scalability.…”

Capacitor-less A-RAM SOI memory: Principles, scaling and expected performance

“…This single-transistor memory (1T-DRAM) approach is a paradigm shift which will require a significant effort dedicated to the design of specific addressing/sensing circuits. Several memory cells have been proposed based on this revolutionary concept [6][7][8][9][10][11]. The essence of the SOI 1T-DRAM is the body effect [12].…”

Convex Channel Design for Improved Capacitorless DRAM Retention Time

“…Multiple-gate cell designs have been proposed [2,3]. Recently, the capacitorless DRAM Generation 2 (BJT-based) cell design was developed to improve sensing margin [4]. Han et al introduced a band-engineered Unified-RAM (NVM + capacitorless DRAM) [5] in which a buried SiGe layer is used (instead of a buried oxide layer) to avoid the need for a silicon-on-insulator substrate.…”

“…In this work, a convex channel structure is proposed for the capacitorless DRAM Generation 2 type cell [4] to improve retention time. In order to retain the holes stored beneath the gate even more effectively in the Hold state, a smaller bandgap material such as silicon-germanium can be used in the convex channel region.…”