New Metastable W-Center in Electron-Irradiated n-Type InP

Brudnyi, V. N.; Peshev, V. V.; Smorodinov, S. V.

doi:10.1002/pssa.2211140244

Cited by 2 publications

(4 citation statements)

References 5 publications

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“…When the bias is switched off during sample cool-down the A configuration is realized. Some parameters of the W defect have been reported in [3] and are obtained in this paper and shown in Table 1.…”

Section: Resultsmentioning

confidence: 99%

“…It was shown in [3] that (1) and (3) are the same for W1 to W3 peaks, i.e. the W1 to W3 peaks belong to the same defect, but it is not the "normal" three-level center because in the last case the "upper" level E(W1) is filled when the previous levels have been occupied.…”

Section: Discussionmentioning

confidence: 99%

“…1 b. The new metastable W defect with two configurations -A (invisible) and B (which consists of peaks W1 to W3) -has been revealed in the space charge region (SCR) of n-InP (n x 2 x 10'' cmW3) Schottky diodes after electron bombardment at room temperature (RT) [3]. This defect is revealed in irradiated samples after cooling the diode from T 2 410 K to low temperatures with an applied reverse bias ( U + 0 V).…”

Section: Introductionmentioning

confidence: 99%

“…This defect is revealed in irradiated samples after cooling the diode from T 2 410 K to low temperatures with an applied reverse bias ( U + 0 V). The transition rates (Ri) and the characteristic temperatures (Ti) for A f-, B transitions are estimated [3] These equations are the same (within experimental errors) for peaks W 1 to W3. I) Revolution Square 1, SU-63 40 50 Tomsk, USSR. ')…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Characterization of W Defects in Electron-Irradiated InP

Brudnyi

Peshev²,

Smorodinov³

1991

Phys. Stat. Sol. (a)

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The formation of new metastable W defects is observed in the depletion region of n‐InP when a reverse bias is applied to Schottky diodes during bombardment at RT. Two configurations of W defects are found: the A configuration with inverted negative order for levels (first ionization event − 0.7 eV; second at − 0.03 eV following immediately) and the B configuration (peaks W1 to W3) are detected after cooling from 410 to 78 K when a reverse bias is applied to the diode. The transformations between A and B configurations are found to be temperature and illumination induced, bias controlled, and completely reversible: B to A at 145 K and A to B at 325 K. It is supposed that the W defect is a complex which is annealed up to 250 °C. The configuration coordinate diagram for the W defect is proposed.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Characterization of W Defects in Electron-Irradiated InP

Brudnyi

Peshev²,

Smorodinov³

1991

Phys. Stat. Sol. (a)

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Effects of gamma-ray irradiation on the microstructural and luminescent properties of radio-frequency magnetron-sputtered GaN thin films

Wang

Soong

Chen

et al. 2000

Journal of Applied Physics

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The microstructural and luminescent properties of sputtered GaN thin films preiiradiated and γ-ray irradiated were systematically investigated. Analytical results revealed that the increasing doses of γ rays could enhance the occurrence of more nitrogen vacancies, which not only created a prominent deep level luminescence but also destroyed the crystallinity of GaN thin films. For low dose of γ-ray irradiation [≦4 Mrad (GaN)], evidence showed that by raising the irradiation dose, more associated Ga–H complexes would be effectively promoted, yielding an enhanced yellow band emission. However, for high dose of γ-ray irradiation [>4 Mrad (GaN)], further higher doses of γ rays could lead to the dissociation of Ga–H complexes in GaN samples, resulting in a repressed yellow band emission. From both the Fourier transform infrared spectroscopy and yellow band emission results, it is strongly suggested that Ga–H complexes in the vicinity of N most probably act as the origin of yellow band emission in GaN material.

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New Metastable W-Center in Electron-Irradiated n-Type InP

Cited by 2 publications

References 5 publications

Characterization of W Defects in Electron-Irradiated InP

Characterization of W Defects in Electron-Irradiated InP

Effects of gamma-ray irradiation on the microstructural and luminescent properties of radio-frequency magnetron-sputtered GaN thin films

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