New method for determination of harmonic distortion in SOI FD transistors

Widely tunable low-power high-linearity current-mode integrator built using DG-MOSFETs

“…As a result, it is possible to obtain very linear characteristics as can be seen from Fig. 3 In order to quantify this performance, we have used integral function method (IFM), recently developed and validated by Cerderia and co-workers [16], to calculate the third-order harmonic distortion (HD3) of the integrator. The IFM is a general, robust, and fast method that needs only DC transfer characteristics, allowing both device and circuit linearity to be quantified for a variety of operating conditions using simple integrals [17].…”

Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs

“…The THD and HD3 extraction have been performed using the Integral Function Method, which allows for obtaining valid distortion properties from DC curves [16,17]. For operation as amplifier the input signal (V in ) is composed of a DC bias voltage (V o ), which coincides with V GT , associated to a sinusoidal signal of amplitude V a .…”

A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction

“…Numerical integration has already proved to be a useful tool for model parameter extraction in various situations where noisy experimental data is present [24], as well as for other kinds of analytical tasks, such as assessing harmonic distortion, for example [25][26][27].…”

“…Y function calculated according to(25) with the same n = 1 and V T = 0.5 V, for four different values of the monomial order parameter m. When the above-V T current is well described by a monomial-like function, this method can cancel out the effects of mobility degradation only if the monomial order is very close to unity (m % 1) (equivalent to h = 0 in…”