1992
DOI: 10.1116/1.586331
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New model of polymer silylation: Application to lithography

Abstract: A new model of polymer silylation is proposed. This model takes into account the reaction of the silylating agent with the hydroxyl groups of the polymer and the relaxation rate of the polymer after reaction. The diffusion coefficient of the silylating agent is supposed to be a function of the expansion of the polymer matrix. At the interface between the silylating agent and the polymer, it is assumed that sorption driven by the pressure of the silylating agent, and desorption driven by the concentration of th… Show more

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Cited by 4 publications
(7 citation statements)
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“…6 Reaction-diffusion models proposed by Jaghold et al 7 and Pierrat 8 include gas phase incorporation and diffusion of the silylating agent into the film. The proposed model takes into account three relevant mechanisms: ͑a͒ the relaxation of the polymer during silylation, ͑b͒ the resultant increase in the diffusivity of the silylating agent as a function of the resist matrix expansion, 8 as well as ͑c͒ a local reaction rate retardation due to stresses associated with nonuniform resist swelling. 9 In this article, we describe a new mechanism-based model of polymer silylation that will be used to explain the influence of the silylation process parameters on the silicon profiles in the resist.…”
Section: Introductionmentioning
confidence: 99%
“…6 Reaction-diffusion models proposed by Jaghold et al 7 and Pierrat 8 include gas phase incorporation and diffusion of the silylating agent into the film. The proposed model takes into account three relevant mechanisms: ͑a͒ the relaxation of the polymer during silylation, ͑b͒ the resultant increase in the diffusivity of the silylating agent as a function of the resist matrix expansion, 8 as well as ͑c͒ a local reaction rate retardation due to stresses associated with nonuniform resist swelling. 9 In this article, we describe a new mechanism-based model of polymer silylation that will be used to explain the influence of the silylation process parameters on the silicon profiles in the resist.…”
Section: Introductionmentioning
confidence: 99%
“…Equation (21) is sixnilarto expressions given in [15] and [19]; for w = O Equations (21) and (22) are expressionsof Fick's law (where for lack of data we have assumed e@al diffusion coefficientsfor .4 and B).…”
Section: Dieuandon Flux Expressionsmentioning
confidence: 99%
“…Pierrat [15]proposed the exponential dependence of the diffuion coefficient on the expanded, silylated resist concentration c~, arguing that the filon coefficient should be larger in the silylated areas due to the swellingand decreasesin density and glass transitiontemperatureof the polymer that occur in the silylation process. Note that Crank [271assumed an exponential dependence of the diffurion coefficient on penetrant concentration to describe non-Fickian dif?usionin polymers.…”
Section: Dieuandon Flux Expressionsmentioning
confidence: 99%
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