New physically-based PiN diode compact model for circuit modelling applications

Igić, Petar; Mawby, P.A.; Towers, M.S.; Batcup, S.

doi:10.1049/ip-cds:20020365

Cited by 33 publications

(33 citation statements)

References 10 publications

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“…The Press Pack IEGT modules (grey shaded areas in Figure 3) consist of an IEGT device (TR1/TR2) and a freewheeling diode (FWD D1/D2). For a FWD we used diode compact model presented in Reference [4]. During double-pulse switching test, transistor TR1 is switched off by applying constant negative voltage on the device gate.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…1D compact models have been presented in literature [3][4][5] and successfully used to represent GTOs and IGBTs. However, to correctly describe the static and dynamic behaviour of the IEGT a 2D model is required since conductivity modulation and non-quasi static charge storage effects dominate the operation of this device and its operation is two dimensional in nature.…”

Section: Introductionmentioning

confidence: 99%

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Physically based 2D compact model for power bipolar devices

Igić

Towers

Mawby

2004

Int J Numerical Modelling

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SUMMARYThe two-dimensional (2D) physical compact model for advanced power bipolar devices such as injection enhanced gate transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500V-1500A flat pack TOSHIBA IEGT.

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Section: Simulation Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Physically based 2D compact model for power bipolar devices

Igić

Towers

Mawby

2004

Int J Numerical Modelling

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“…However, quasi-neutrality ðp % nÞ where D a represent the ambipolar diffusion constant and t A represent the ambipolar carrier lifetime. Our approach [9,10] is to model the ADE describing the internal plasma charge distribution using two exponential functions based on the ambipolar diffusion length…”

Section: Physically Based Igbt Compact Modelmentioning

confidence: 99%

“…Physically based compact model [9,10] has been selected as a switching device in the inverter circuit. This model used the full ambipolar diffusion equation (ADE) solution and solving numerically the basic drift-diffusion equations.…”

Section: Physically Based Igbt Compact Modelmentioning

confidence: 99%

A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three-phase inverter system

Zhou¹,

Khanniche²,

Igić³

et al. 2005

Int. J. Numer. Model.

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SUMMARYA fast power losses calculation method for long real time thermal simulation of IGBT module for a threephase inverter system is presented in this paper. The speed-up is obtained by simplifying the representation of the three-phase inverter at the system modelling stage. This allows the inverter system to be simulated predicting the effective voltages and currents whilst using large time-step. An average power losses is calculated during each clock period, using a pre-defined look-up table, which stores the switching and on-state losses generated by either direct measurement or automatically based upon compact models for the semiconductor devices. This simulation methodology brings together accurate models of the electrical systems performance, state of the art-device compact models and a realistic simulation of the thermal performance in a usable period of CPU time and is suitable for a long real time thermal simulation of inverter power devices with arbitrary load. Thermal simulation results show that with the same IGBT characteristics applied, the proposed model can give the almost same thermal performance compared to the full physically based device modelling approach.

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“…Moreover, the simulation possibly leads to large voltage and current overshoots, power losses and EMI phenomena. Some Si pin diode models have been proposed [3,4,5], as the diode model available in PSPICE is unable to predict the actual characteristics of pin structures. The previously developed Si diode models need not only internal structure (thickness, and impurity concentration of the drift region), but also physical parameters (minority carrier life time and carrier mobility) of the diode [3,4,5] for each device.…”

Section: Introductionmentioning

confidence: 99%

Simple circuit model of SiC pin diode composed by using experimental electrical characteristics

Asano

Funaki

Sugawara

et al. 2005

IEICE Electron. Express

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Abstract:In this paper, new simple circuit models for developed SiC pin diodes are proposed. They are based on the electrical characteristics obtained in experiments without any detail information of internal structure and physical parameters. The validity of the circuit models is confirmed by correspondence between simulated characteristics and experimental one. The model installed in the experimental circuit configuration can precisely simulate the waveforms of the reverse recovery current and the forward characteristics. As a result, the proposed model is shown to be appropriate for describing the characteristics of high capability SiC diode module in the circuit operation.

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New physically-based PiN diode compact model for circuit modelling applications

Cited by 33 publications

References 10 publications

Physically based 2D compact model for power bipolar devices

Physically based 2D compact model for power bipolar devices

A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three-phase inverter system

Simple circuit model of SiC pin diode composed by using experimental electrical characteristics

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